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Found: 28      Displaying: 21 - 28
#
Part:
Description:
Manuf.
Package
Pins
T°min
T°max
PDF size
21.
BUL52AAdvanced distributed base design high voltage high speed NPN silicon power transistor. Designed for use in electronic ballast applications.
MGNTC
TO220
3
0°C
150°C
19K
22.
BUL52BAdvanced distributed base design high voltage high speed NPN silicon power transistor. Designed for use in electronic ballast applications.
MGNTC
TO220
3
0°C
150°C
19K
23.
BUL54AAdvanced distributed base design high voltage high speed NPN silicon power transistor. Designed for use in electronic ballast applications.
MGNTC
TO220
3
0°C
150°C
19K
24.
BUL54BAdvanced distributed base design high voltage high speed NPN silicon power transistor. Designed for use in electronic ballast applications.
MGNTC
TO220
3
0°C
150°C
18K
25.
BUL57A70V Vce, 22A Ic, 20MHz NPN bipolar transistor
SAMEL
TO220
-
-
-
19K
26.
BUL58A160V Vce, 10A Ic, 20MHz NPN bipolar transistor
SAMEL
TO220
-
-
-
19K
27.
BUL58B100V Vce, 12A Ic, 20MHz NPN bipolar transistor
SAMEL
TO220
-
-
-
19K
28.
BUL58BSMD100V Vce, 12A Ic, 20MHz NPN bipolar transistor
SAMEL
SMD1
-
-
-
22K
1 2


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