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We have more Special DataSheet than other site. If, There is not a datasheet which searches, Request ! (It will updated in 12 hours.)
ChipManuals is a free electronic engineering tool that enables you to locate product datasheets from hundreds of electronic component manufacturers worldwide.
Found: 37 Displaying: 21 - 37| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size | | 21. | BD242 | NPN Epitaxial Silicon Transistor | FAIR | - | - | - | - | 27K | | 22. | BD242 | 4mW NPN silicon epitaxial base power transistor | ME | TO-220B | 3 | -55°C | 150°C | 98K | | 23. | BD242 | 55 V, PNP silicon power transistor | TEL | TO-220 | 3 | -65°C | 150°C | 476K | | 24. | BD242 | 55 V, PNP silicon power transistor | TRSYS | TO-220 | 3 | -65°C | 150°C | 476K | | 25. | BD242A | PNP Epitaxial Silicon Transistor | FAIR | - | - | - | - | 27K | | 26. | BD242A | 4mW NPN silicon epitaxial base power transistor | ME | TO-220B | 3 | -55°C | 150°C | 98K | | 27. | BD242A | 70 V, PNP silicon power transistor | TEL | TO-220 | 3 | -65°C | 150°C | 476K | | 28. | BD242A | 70 V, PNP silicon power transistor | TRSYS | TO-220 | 3 | -65°C | 150°C | 476K | | 29. | BD242A | PNP silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 60Vdc, Vces = 70Vdc, Veb = 5Vdc Ic = 3Adc, PD = 40W. | USHA | TO-220 | 3 | -65°C | 150°C | 47K | | 30. | BD242B | 4mW NPN silicon epitaxial base power transistor | ME | TO-220B | 3 | -55°C | 150°C | 98K | | 31. | BD242B | 90 V, PNP silicon power transistor | TEL | TO-220 | 3 | -65°C | 150°C | 476K | | 32. | BD242B | 90 V, PNP silicon power transistor | TRSYS | TO-220 | 3 | -65°C | 150°C | 476K | | 33. | BD242B | PNP silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 80Vdc, Vces = 90Vdc, Veb = 5Vdc Ic = 3Adc, PD = 40W. | USHA | TO-220 | 3 | -65°C | 150°C | 47K | | 34. | BD242C | PNP Epitaxial Silicon Transistor | FAIR | - | - | - | - | 27K | | 35. | BD242C | 115 V, PNP silicon power transistor | TEL | TO-220 | 3 | -65°C | 150°C | 476K | | 36. | BD242C | 115 V, PNP silicon power transistor | TRSYS | TO-220 | 3 | -65°C | 150°C | 476K | | 37. | BD242C | PNP silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 100Vdc, Vces = 115Vdc, Veb = 5Vdc Ic = 3Adc, PD = 40W. | USHA | TO-220 | 3 | -65°C | 150°C | 47K |
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