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Found: 39      Displaying: 21 - 39
#
Part:
Description:
Manuf.
Package
Pins
T°min
T°max
PDF size
21.
BD24145 V, complementary NPN silicon power transistor
BOCA
TO-220
3
-65°C
150°C
139K
22.
BD241NPN Epitaxial Silicon Transistor
FAIR
-
-
-
-
27K
23.
BD2414mW NPN silicon epitaxial base power transistor
ME
TO-220B
3
-55°C
150°C
97K
24.
BD24155 V, NPN silicon power transistor
TEL
TO-220
3
-65°C
150°C
432K
25.
BD24155 V, NPN silicon power transistor
TRSYS
TO-220
3
-65°C
150°C
432K
26.
BD241A60 V, complementary NPN silicon power transistor
BOCA
TO-220
3
-65°C
150°C
139K
27.
BD241ANPN Epitaxial Silicon Transistor
FAIR
-
-
-
-
27K
28.
BD241A4mW NPN silicon epitaxial base power transistor
ME
TO-220B
3
-55°C
150°C
97K
29.
BD241A70 V, NPN silicon power transistor
TEL
TO-220
3
-65°C
150°C
432K
30.
BD241A70 V, NPN silicon power transistor
TRSYS
TO-220
3
-65°C
150°C
432K
31.
BD241ANPN silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 60Vdc, Vces = 70Vdc, Veb = 5Vdc, Ic = 3Adc, Pd = 40W
USHA
TO-220
3
-65°C
150°C
47K
32.
BD241B4mW NPN silicon epitaxial base power transistor
ME
TO-220B
3
-55°C
150°C
97K
33.
BD241B90 V, NPN silicon power transistor
TEL
TO-220
3
-65°C
150°C
432K
34.
BD241B90 V, NPN silicon power transistor
TRSYS
TO-220
3
-65°C
150°C
432K
35.
BD241BNPN silicon plastic power NPN transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 80Vdc, Vces = 90Vdc, Veb = 5Vdc, Ic = 3Adc, Pd = 40W
USHA
TO-220
3
-65°C
150°C
47K
36.
BD241CNPN Epitaxial Silicon Transistor
FAIR
-
-
-
-
27K
37.
BD241C115 V, NPN silicon power transistor
TEL
TO-220
3
-65°C
150°C
432K
38.
BD241C115 V, NPN silicon power transistor
TRSYS
TO-220
3
-65°C
150°C
432K
39.
BD241CNPN silicon plastic power NPN transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 100Vdc, Vces = 115Vdc, Veb = 5Vdc, Ic = 3Adc, Pd = 40W
USHA
TO-220
3
-65°C
150°C
47K
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