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t30n datasheet



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Found: 18      Displaying: 1 - 18
#
Part:
Description:
Manuf.
Package
Pins
T°min
T°max
PDF size
1.
74HCT30N8-input NAND gate
PHLPS
SOT27
-
-
-
34K
2.
74HCT30NB8-input NAND gate
PHLPS
SOT27
-
-
-
34K
3.
74HCT30NB8-input NAND gate
PHLPS
SOT27
-
-
-
34K
4.
IXDT30N1201200V high voltage IGBT with optional diode
IXYS
TO-268AA
3
-55°C
150°C
86K
5.
IXDT30N120D11200V high voltage IGBT with optional diode
IXYS
TO-268AA
3
-55°C
150°C
86K
6.
IXFT30N40Q400V HiPerFET power MOSFET Q-class
IXYS
TO-268
3
-55°C
150°C
105K
7.
IXFT30N50500V HiPerFET power MOSFET
IXYS
TO-268
3
-55°C
150°C
110K
8.
IXFT30N50Q500V HiPerFET power MOSFET
IXYS
TO-268
3
-55°C
150°C
110K
9.
IXGT30N60B600V HiPerFAST IGBT
IXYS
TO-268
3
-55°C
150°C
53K
10.
IXGT30N60BD1600V HiPerFAST IGBT with diode
IXYS
TO-268
3
-55°C
150°C
114K
11.
IXGT30N60BU1600V HiPerFAST IGBT with diode
IXYS
TO-268
3
-55°C
150°C
141K
12.
IXST30N60BD1600V high speed IGBT with diode
IXYS
TO-268
3
-55°C
150°C
119K
13.
IXST30N60C600V high speed IGBT
IXYS
TO-268
3
-55°C
150°C
131K
14.
IXST30N60CD1600V high speed IGBT with diode
IXYS
TO-268
3
-55°C
150°C
72K
15.
VT30N1Photoconductive cell
PERK
-
2
-40°C
75°C
1M
16.
VT30N2Photoconductive cell
PERK
-
2
-40°C
75°C
1M
17.
VT30N3Photoconductive cell
PERK
-
2
-40°C
75°C
1M
18.
VT30N4Photoconductive cell
PERK
-
2
-40°C
75°C
1M
1


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