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sh20 datasheet



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Found: 19      Displaying: 1 - 19
#
Part:
Description:
Manuf.
Package
Pins
T°min
T°max
PDF size
1.
2SH20IGBT
HIT
TO-3P
-
-
-
43K
2.
2SH20IGBT
HIT
TO-3P
-
-
-
43K
3.
BSH201P-channel enhancement mode MOS transistor.
PHLPS
SOT23
3
-55°C
150°C
150K
4.
BSH202P-channel enhancement mode MOS transistor.
PHLPS
SOT23
3
-55°C
150°C
138K
5.
BSH203P-channel enhancement mode MOS transistor.
PHLPS
SOT23
3
-55°C
150°C
149K
6.
BSH205P-channel enhancement mode MOS transistor
PHLPS
SOT23
-
-
-
143K
7.
BSH205P-channel enhancement mode MOS transistor.
PHLPS
SOT23
3
-55°C
150°C
143K
8.
BSH206P-channel enhancement mode MOS transistor
PHLPS
SOT363
-
-
-
144K
9.
BSH206P-channel enhancement mode MOS transistor.
PHLPS
SOT363
6
-55°C
150°C
144K
10.
BSH207P-channel enhancement mode MOS transistor
PHLPS
SOT457
-
-
-
155K
11.
BSH207P-channel enhancement mode MOS transistor
PHLPS
SOT457
-
-
-
155K
12.
BSH207P-channel enhancement mode MOS transistor.
PHLPS
SOT457
6
-55°C
150°C
155K
13.
HSH2000NIEOLamp for photolithography. Power 1750 watts, current 67 amps(DC), voltage 26 volts(DC). Temperature(at base) 220degC(max).
PERK
-
2
-
-
44K
14.
HSH2001CIEOLamp for photolithography. Power 2000 watts, current 77 amps(DC), voltage 26 volts(DC). Temperature(at base) 220degC(max).
PERK
-
2
-
-
42K
15.
HSH2001NIELOLamp for photolithography. Power 1750 watts, current 67 amps(DC), voltage 26 volts(DC). Temperature(at base) 220degC(max).
PERK
-
2
-
-
41K
16.
HSH2001NIEOLamp for photolithography. Power 1750 watts, current 67 amps(DC), voltage 26 volts(DC). Temperature(at base) 220degC(max).
PERK
-
2
-
-
51K
17.
HSH2002NIEOLamp for photolithography. Power 1750 watts, current 67 amps(DC), voltage 26 volts(DC). Temperature(at base) 220degC(max).
PERK
-
2
-
-
43K
18.
HSH2011NIEOLamp for photolithography. Power 2000 watts, current 80 amps(DC), voltage 25 volts(DC). Temperature(at base) 220degC(max).
PERK
-
2
-
-
42K
19.
KSH200NPN Epitaxial Silicon Transistor
FAIR
-
-
-
-
52K
1


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