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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 1. | 1N5551 | Glass Passivated Junction Rectifier | GE | G4 | - | - | - | 53K |
| 2. | 1N5551 | Standard Rectifier (trr more than 500ns) | MSEMI | B_(WT) | - | - | - | 78K |
| 3. | 1N5551 | Standard Rectifier (trr more than 500ns) | MSEMI | E | - | - | - | 46K |
| 4. | 1N5551 | 400 V rectifier 5.0 A forward current, 2000 ns recovery time | VMI | - | 2 | -65°C | 175°C | 101K |
| 5. | 1N5551US | Standard Rectifier (trr more than 500ns) | MSEMI | B_MELF(WT) | - | - | - | 78K |
| 6. | 2N5551 | 150 V, NPN epitaxial planar selicon high voltage transistor | BOCA | - | 3 | -55°C | 150°C | 57K |
| 7. | 2N5551 | NPN General Purpose Amplifier | FAIR | - | 3 | - | - | 500K |
| 8. | 2N5551 | NPN transistor for general purpose and high voltage applications | KEC | - | 3 | -55°C | 150°C | 146K |
| 9. | 2N5551 | 1W NPN complementary silicon general purpose high voltage transistor | ME | TO-92F | 3 | -55°C | 150°C | 165K |
| 10. | 2N5551 | Amplifier Transistor NPN | ON | - | 3 | - | - | 188K |
| 11. | 2N5551 | Amplifier transistor. Collector-emitter voltage: Vceo = 160V. Collector-base voltage: Vcbo = 180V. Collector dissipation: Pc(max) = 625mW. | USHA | - | 3 | 0°C | 150°C | 75K |
| 12. | 2N5551C | NPN transistor for general purpose and high voltage applications | KEC | - | 3 | -55°C | 150°C | 164K |
| 13. | 2N5551RL1 | Amplifier Transistor NPN | ON | - | 3 | - | - | 188K |
| 14. | 2N5551RLRA | Amplifier Transistor NPN | ON | - | 3 | - | - | 188K |
| 15. | 2N5551RLRM | Amplifier Transistor NPN | ON | - | 3 | - | - | 188K |
| 16. | 2N5551RLRP | Amplifier Transistor NPN | ON | - | 3 | - | - | 188K |
| 17. | 2N5551S | NPN transistor for general purpose and high voltage applications | KEC | SOT-23 | 3 | -55°C | 150°C | 150K |
| 18. | 2N5551ZL1 | Amplifier Transistor NPN | ON | - | 3 | - | - | 188K |
| 19. | H2N5551 | 600mA NPN epitaxial planar transistor | HSMC | - | 3 | - | - | 37K |
