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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 1. | MMFT2N25E | High energy power FET | MOT | TO-261AA | 4 | -65°C | 150°C | 139K |
| 2. | MTB16N25E | TMOS E-FET high energy power FET | MOT | DPAK | 4 | -55°C | 150°C | 259K |
| 3. | MTB9N25E | TMOS E-FET high energy power FET D2PAK for surface mount | MOT | DPAK | 4 | -55°C | 150°C | 258K |
| 4. | MTP3N25E | TMOS E-FET power field effect transistor | MOT | - | 4 | -55°C | 150°C | 208K |
| 5. | MTP9N25E | TMOS E-FET power field effect transistor | MOT | - | 4 | -55°C | 150°C | 206K |
| 6. | MTW23N25E | TMOS E-FET power field effect transistor TO-247 with isolated mounting hole | MOT | TO-247AE | 4 | -55°C | 150°C | 152K |
| 7. | MTW32N25E | TMOS E-FET power field effect transistor TO-247 with isolated mounting hole | MOT | TO-247AE | 4 | -55°C | 150°C | 151K |
| 8. | R3130N25EA-TR | Low voltage detector with built-in delay circuit. Detector threshold 2.5V. Standard output delay time 240ms. Output type Nch open drain. Taping type TR. | RICOH | SOT-23 | 3 | -40°C | 85°C | 273K |
| 9. | R3130N25EC-TR | Low voltage detector with built-in delay circuit. Detector threshold 2.5V. Standard output delay time 240ms. Output type CMOS. Taping type TR. | RICOH | SOT-23 | 3 | -40°C | 85°C | 273K |
| 10. | R3131N25EA-TR | Low voltage detector with built-in delay circuit. Detector threshold 2.5V. Standard output delay time 240ms. Output type Nch open drain. Detection mode H series output. Taping type TR. | RICOH | SOT-23 | 3 | -40°C | 85°C | 273K |
| 11. | R3131N25EC-TR | Low voltage detector with built-in delay circuit. Detector threshold 2.5V. Standard output delay time 240ms. Output type CMOS. Detection mode H series output. Taping type TR. | RICOH | SOT-23 | 3 | -40°C | 85°C | 273K |
