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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 1. | IXDH20N120D1 | 1200V high voltage IGBT with optional diode | IXYS | TO-247AD | 3 | -55°C | 150°C | 74K |
| 2. | IXDH30N120D1 | 1200V high voltage IGBT with optional diode | IXYS | TO-247AD | 3 | -55°C | 150°C | 86K |
| 3. | IXDN55N120D1 | 1200V high voltage IGBT with optional diode | IXYS | SOT-227B | 4 | -40°C | 150°C | 72K |
| 4. | IXDR30N120D1 | 1200V high voltage IGBT with optional diode | IXYS | ISOPLUS247 | 3 | -55°C | 150°C | 69K |
| 5. | IXDT30N120D1 | 1200V high voltage IGBT with optional diode | IXYS | TO-268AA | 3 | -55°C | 150°C | 86K |
| 6. | IXEN40N120D1 | 1200V NPT IGBT | IXYS | TO-247AD | 3 | -55°C | 150°C | 43K |
| 7. | IXEN40N120D1 | 1200V NPT IGBT | IXYS | TO-247AD | 3 | -55°C | 150°C | 43K |
| 8. | IXEN60N120D1 | 1200V NPT IGBT | IXYS | SOT-227B | 4 | -40°C | 150°C | 37K |
| 9. | MGV12N120D | Insulated gate bipolar transistor | MOT | TO-268AA | 3 | -55°C | 150°C | 79K |
| 10. | MGW12N120D | Insulated gate bipolar transistor with anti-parallel diode | MOT | TO-247AE | 3 | -55°C | 150°C | 250K |
| 11. | MGW12N120D | Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel | ON | TO-247 | 3 | - | - | 168K |
| 12. | MGY20N120D | Insulated gate bipolar transistor | MOT | TO-264 | 3 | -55°C | 150°C | 254K |
| 13. | MGY20N120D | Insulated gate bipolar transistor | MOT | TO-264 | 3 | -55°C | 150°C | 254K |
| 14. | MGY20N120D | Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel | ON | TO-3PBL | 3 | - | - | 171K |
| 15. | MGY25N120D | Insulated gate bipolar transistor | MOT | TO-264 | 3 | -55°C | 150°C | 256K |
| 16. | MGY25N120D | Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel | ON | TO-3PBL | 3 | - | - | 171K |
