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irg4rc datasheet



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Found: 15      Displaying: 1 - 15
#
Part:
Description:
Manuf.
Package
Pins
T°min
T°max
PDF size
1.
IRG4RC10KInsulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 2.39V @ VGE = 15V, IC = 5.0A
IRF
D-PAK
3
-55°C
150°C
134K
2.
IRG4RC10KInsulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 2.39V @ VGE = 15V, IC = 5.0A
IRF
TO-252AA
3
-55°C
150°C
134K
3.
IRG4RC10KDInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 2.39V @ VGE = 15V, IC = 5.0A
IRF
TO-252AA
3
-55°C
150°C
190K
4.
IRG4RC10KDInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 2.39V @ VGE = 15V, IC = 5.0A
IRF
D-PAK
3
-55°C
150°C
190K
5.
IRG4RC10SInsulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.10V @ VGE = 15V, IC = 2.0A
IRF
TO-252AA
3
-55°C
150°C
120K
6.
IRG4RC10SInsulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.10V @ VGE = 15V, IC = 2.0A
IRF
D-PAK
3
-55°C
150°C
120K
7.
IRG4RC10SDInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.10V @ VGE = 15V, IC = 2.0A
IRF
D-PAK
3
-55°C
150°C
189K
8.
IRG4RC10SDInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.10V @ VGE = 15V, IC = 2.0A
IRF
TO-252AA
3
-55°C
150°C
189K
9.
IRG4RC10SDInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.10V @ VGE = 15V, IC = 2.0A
IRF
TO-252AA
3
-55°C
150°C
189K
10.
IRG4RC10UInsulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 2.15V @ VGE = 15V, IC = 5.0A
IRF
D-PAK
3
-55°C
150°C
131K
11.
IRG4RC10UInsulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 2.15V @ VGE = 15V, IC = 5.0A
IRF
TO-252AA
3
-55°C
150°C
131K
12.
IRG4RC10UDInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 2.15V @ VGE = 15V, IC = 5.0A, tf(typ) = 140ns.
IRF
TO-252AA
3
-55°C
150°C
191K
13.
IRG4RC10UDInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 2.15V @ VGE = 15V, IC = 5.0A, tf(typ) = 140ns.
IRF
D-PAK
3
-55°C
150°C
191K
14.
IRG4RC20FInsulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.82V @ VGE = 15V, IC = 12A
IRF
D-PAK
3
-55°C
150°C
264K
15.
IRG4RC20FInsulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.82V @ VGE = 15V, IC = 12A
IRF
TO-252AA
3
-55°C
150°C
264K
1


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