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f1000 datasheet



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Found: 39      Displaying: 1 - 20
#
Part:
Description:
Manuf.
Package
Pins
T°min
T°max
PDF size
1.
MRF100055 W, microwave power transistor NPN silicon
MACOM
-
3
-
-
160K
2.
MRF10005Microwave power transistor
MOT
-
3
-
-
100K
3.
MRF1000MB0.7 W, microwave power transistor NPN silicon
MACOM
-
4
-
-
104K
4.
MX28F1000PPC-12C41M-bit (128K x 8) CMOS flash memory
MCNIX
DIP
32
-40°C
85°C
127K
5.
MX28F1000PPC-70C41M-bit (128K x 8) CMOS flash memory
MCNIX
DIP
32
-40°C
85°C
127K
6.
MX28F1000PPC-90C41M-bit (128K x 8) CMOS flash memory
MCNIX
DIP
32
-40°C
85°C
127K
7.
MX28F1000PQC-12C41M-bit (128K x 8) CMOS flash memory
MCNIX
PLCC
32
-40°C
85°C
127K
8.
MX28F1000PQC-70C41M-bit (128K x 8) CMOS flash memory
MCNIX
PLCC
32
-40°C
85°C
127K
9.
MX28F1000PQC-90C41M-bit (128K x 8) CMOS flash memory
MCNIX
PLCC
32
-40°C
85°C
127K
10.
MX28F1000PTC-70C41M-bit (128K x 8) CMOS flash memory
MCNIX
TSOP
32
-40°C
85°C
127K
11.
MX28F1000PTC-70C41M-bit (128K x 8) CMOS flash memory
MCNIX
TSOP
32
-40°C
85°C
127K
12.
PTF1000735 watts, 1.0 GHz GOLDMOS field effect transistor
ERSON
20222
4
-
-
235K
13.
PTF1000985 watts, 1.0 GHz GOLDMOS field effect transistor
ERSON
20230
6
-
-
228K
14.
TSMF1000High speed IR emitter diode
TFUNK
IE51 - T3/4
-
-
-
38K
15.
UF1000Reverse voltage: 50.00V; 10A ultrafast glass passivated rectifier
WTE
TO-220A
2
-65°C
150°C
44K
16.
UF1000Reverse voltage: 50.00V; 10A ultrafast glass passivated rectifier
WTE
TO-220A
2
-65°C
150°C
44K
17.
UF1000FReverse voltage: 50.00V; 10A isolated ultrafast glass passivated rectifier
WTE
TO-220A
2
-65°C
150°C
44K
18.
UF1000FReverse voltage: 50.00V; 10A isolated ultrafast glass passivated rectifier
WTE
TO-220A
2
-65°C
150°C
44K
19.
UF1000FCTReverse voltage: 50.00V; 10A isolated ultrafast glass passivated rectifier
WTE
TO-220
3
-65°C
150°C
46K
20.
UF1000FCTReverse voltage: 50.00V; 10A isolated ultrafast glass passivated rectifier
WTE
TO-220
3
-65°C
150°C
46K
1 2


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