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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 1. | NE5514D | Quad high-performance operational amplifier | PHLPS | SOT162 | - | - | - | 54K |
| 2. | NE5514N | Quad high-performance operational amplifier | PHLPS | SOT27 | - | - | - | 54K |
| 3. | NE5514NB | Quad high-performance operational amplifier | PHLPS | SOT27 | - | - | - | 54K |
| 4. | NE5514NB | Quad high-performance operational amplifier | PHLPS | SOT27 | - | - | - | 54K |
| 5. | NE5517AN | Dual operational transconductance amplifier | PHLPS | SOT38 | - | - | - | 298K |
| 6. | NE5517N | Dual operational transconductance amplifier | PHLPS | SOT38 | - | - | - | 298K |
| 7. | NTE5511 | Silicon controlled rectifier (SCR), 5 Amp. Peak reverse voltage (repetitive) Vrm(rep) = 200V. Forward current RMS Ifrms = 5A. | NTE | TO66 | 2 | -40°C | 100°C | 22K |
| 8. | NTE5512 | Silicon controlled rectifier (SCR), 5 Amp. Peak reverse voltage (repetitive) Vrm(rep) = 400V. Forward current RMS Ifrms = 5A. | NTE | TO66 | 2 | -40°C | 100°C | 22K |
| 9. | NTE5513 | Silicon controlled rectifier (SCR), 5 Amp. Peak reverse voltage (repetitive) Vrm(rep) = 600V. Forward current RMS Ifrms = 5A. | NTE | TO66 | 2 | -40°C | 100°C | 22K |
| 10. | NTE5514 | Silicon controlled rectifier (SCR). Repetitive peak reverse voltage Vrrm = 200V. RMS on-state current It(rms) = 20A. | NTE | - | 3 | -40°C | 150°C | 18K |
| 11. | NTE5515 | Silicon controlled rectifier (SCR). Repetitive peak reverse voltage Vrrm = 400V. RMS on-state current It(rms) = 20A. | NTE | - | 3 | -40°C | 150°C | 18K |
| 12. | NTE5516 | Silicon controlled rectifier (SCR). Repetitive peak reverse voltage Vrrm = 600V. RMS on-state current It(rms) = 20A. | NTE | - | 3 | -40°C | 150°C | 18K |
| 13. | NTE5517 | Silicon controlled rectifier (SCR). Repetitive peak reverse voltage Vrrm = 200V. RMS on-state current It(rms) = 35A. | NTE | - | 3 | -40°C | 150°C | 18K |
| 14. | NTE5518 | Silicon controlled rectifier (SCR). Repetitive peak reverse voltage Vrrm = 400V. RMS on-state current It(rms) = 35A. | NTE | - | 3 | -40°C | 150°C | 18K |
| 15. | NTE5519 | Silicon controlled rectifier (SCR). Repetitive peak reverse voltage Vrrm = 600V. RMS on-state current It(rms) = 35A. | NTE | - | 3 | -40°C | 150°C | 18K |
| 16. | NTE5519 | Silicon controlled rectifier (SCR). Repetitive peak reverse voltage Vrrm = 600V. RMS on-state current It(rms) = 35A. | NTE | - | 3 | -40°C | 150°C | 18K |
| 17. | R3111E551A-TZ | Low voltage detector. Detector threshold (-Vdet) 5.5V. Output type: Nch open drain. | RICOH | - | 3 | -40°C | 85°C | 205K |
| 18. | R3111E551C-TZ | Low voltage detector. Detector threshold (-Vdet) 5.5V. Output type: CMOS | RICOH | - | 3 | -40°C | 85°C | 205K |
| 19. | SE5512N | Dual high-performance operational amplifier | PHLPS | DIP | 8 | -55°C | 125°C | 33K |
| 20. | XNE5514CU | Quad high-performance operational amplifier | PHLPS | - | - | - | - | 54K |
