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# | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
1. | CEB6030AL | N-channel logic level enhancement mode field effect transistor | CETSE | TO-263 | 3 | -65°C | 175°C | 516K |
2. | CEB6030L | N-channel logic level enhancement mode field effect transistor | CETSE | TO-263 | 3 | -65°C | 175°C | 516K |
3. | CEB6030LS2 | N-channel logic level enhancement mode field effect transistor | CETSE | TO-263 | 3 | -65°C | 175°C | 530K |
4. | CEB6031L | N-channel logic level enhancement mode field effect transistor | CETSE | TO-263 | 3 | -65°C | 175°C | 513K |
5. | CEB6031LS2 | N-channel logic level enhancement mode field effect transistor | CETSE | TO-263 | 3 | -65°C | 175°C | 531K |
6. | CEB603AL | N-channel logic level enhancement mode field effect transistor | CETSE | TO-263 | 3 | -65°C | 175°C | 515K |
7. | CEB603ALS2 | N-channel logic level enhancement mode field effect transistor | CETSE | TO-263 | 3 | -65°C | 175°C | 529K |
8. | FDB6030BL | N-Channel Logic Level PowerTrench® MOSFET | FAIR | - | - | - | - | 401K |
9. | FDB6030L | N-Channel Logic Level Enhancement Mode Field Effect Transistor | FAIR | - | - | - | - | 473K |
10. | FDB6035AL | N-Channel Logic Level PowerTrench® MOSFET | FAIR | - | - | - | - | 414K |
11. | FDB6035L | N-Channel Logic Level Enhancement Mode Field Effect Transistor | FAIR | - | - | - | - | 413K |
12. | FDB603AL | N-Channel Logic Level Enhancement Mode Field Effect Transistor | FAIR | - | - | - | - | 414K |
13. | NDB6030L | Length/Height 4.69 mm Width 10.54 mm Depth 15.49 mm Power dissipation 75 W Transistor polarity N Channel Current Id cont. 52 A Voltage Vgs th max. 3 V (D2-Pak) Voltage Vds max 30 V | FAIR | TO-263 | - | - | - | 56K |
14. | NDB603AL | N-channel logic level enhancement mode field effect transistor, 30V, 25A | FAIR | TO-263AB | 3 | -65°C | 175°C | 65K |
15. | SB603 | 200 V, 6.0 A silicon bridge | SURGE | SB | 4 | -65°C | 150°C | 90K |