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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 1. | 2SB1012(K) | Bipolar power switching Darlington transistor | HIT | TO-126MOD | - | - | - | 33K |
| 2. | 2SB1016 | PNP epitaxial silicon transistor. Power amplifier vertical defclection output. | WINGS | - | 3 | - | - | 69K |
| 3. | BB101C | Small signal high frequency amplifier field effect (FET) transistor | HIT | CMPAK-4 | - | - | - | 48K |
| 4. | BB101M | Small signal high frequency amplifier field effect (FET) transistor | HIT | MPAK-4 | - | - | - | 48K |
| 5. | CEB1012 | N-channel enhancement mode field transistor | CETSE | TO-263 | 3 | -65°C | 150°C | 498K |
| 6. | CEB1012L | N-channel enhancement mode field transistor | CETSE | TO-263 | 3 | -65°C | 150°C | 497K |
| 7. | DB101 | 1.0A single-phase silicon bridge rectifier | DCCOM | DB-1 | 4 | -65°C | 150°C | 375K |
| 8. | DB101 | Single-phase glass passivated silicon bridge rectifier. VRRM = 50V, VRMS = 35V, VDC = 50V. Current 1.0A. | RECTR | DB-1 | 4 | -65°C | 150°C | 36K |
| 9. | DB101 | Single-phase silicon bridge rectifier. Current 1.0A. Maximum recurrent peak reverse voltage 50V. Maximum RMS bridge input voltage 35V. Maximum DC blocking voltage 50V. | WINGS | DB-1 | 4 | -65°C | 150°C | 272K |
| 10. | DB1012S | Single-phase glass passivated silicon bridge rectifier. MaxVRRM = 1200V, maxVRMS = 840V, maxVDC = 1200V. Current 1.0A. | RECTR | DB-S | 4 | -65°C | 150°C | 21K |
| 11. | DB101S | 1.0A single-phase surface mount bridge rectifier | DCCOM | DB-1 | 4 | -55°C | 150°C | 424K |
| 12. | DB101S | Single-phase glass passivated silicon bridge rectifier. MaxVRRM = 50V, maxVRMS = 35V, maxVDC = 50V. Current 1.0A. | RECTR | DB-S | 4 | -55°C | 150°C | 20K |
| 13. | EDB101 | Glass passivated super fast silicon surface mount bridge rectifier. MaxVRRM = 50V, maxVRMS = 35V, maxVDC = 50V. Current 1.0A. | RECTR | DB-1 | 4 | -65°C | 150°C | 28K |
| 14. | EDB101S | Glass passivated super fast silicon surface mount bridge rectifier. MaxVRRM = 50V, maxVRMS = 35V, maxVDC = 50V. Current 1.0A. | RECTR | DB-S | 4 | -65°C | 150°C | 27K |
| 15. | EIB1011-2P | 10.7-11.7GHz, 2W internally matched power FET | EXCEL | - | 2 | - | - | 22K |
| 16. | EIB1011-4P | 10.7-11.7GHz, 4W internally matched power FET | EXCEL | - | 2 | - | - | 22K |
| 17. | MGRB1018 | Gallium arsenide power rectifier | MOT | D2PAK | 4 | -55°C | 175°C | 153K |
| 18. | MGRB1018 | Gallium arsenide power rectifier | MOT | D2PAK | 4 | -55°C | 175°C | 153K |
| 19. | PB1010/S | Silicon bridge rectifier | DIO | - | 4 | -50°C | 150°C | 57K |
| 20. | ZLNB101N8 | Dual polarisation switch twin LNB multiplex controller | ZETEX | SO | 8 | -40°C | 85°C | 77K |
| 21. | ZLNB101N8 | Dual polarisation switch twin LNB multiplex controller | ZETEX | SO | 8 | -40°C | 85°C | 77K |
