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# | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
1. | 2SA1710 | PNP epitaxial planar silicon transistor, high-definition CTR display video output application | SANYO | 2064 | 3 | - | - | 118K |
2. | EIA1718-1P | 17.7-18.7GHz, 1W internally matched power FET | EXCEL | - | 2 | - | - | 22K |
3. | EIA1718-2P | 17.7-18.7GHz, 2W internally matched power FET | EXCEL | - | 2 | - | - | 22K |
4. | EIA1718A-1P | 17.3-18.1GHz, 1W internally matched power FET | EXCEL | - | 2 | - | - | 22K |
5. | EIA1718A-2P | 17.3-18.1GHz, 1W internally matched power FET | EXCEL | - | 2 | - | - | 22K |
6. | KTA1715 | PNP transistor for power amplifier and power switching applications | KEC | TO-126 | 3 | -55°C | 150°C | 460K |
7. | KTA1716 | PNP transistor for high-voltage switching telephone power supply use | KEC | TO-126 | 3 | -55°C | 150°C | 128K |
8. | KTA1718D | Switching Transistor | KEC | - | - | - | - | 413K |
9. | KTA1718L | Switching Transistor | KEC | - | - | - | - | 413K |
10. | UBA1710M | Modulator for GaAs power amplifiers. | PHLPS | SSOP | 20 | -20°C | 85°C | 65K |
11. | UBA1710M | Modulator for GaAs power amplifiers. | PHLPS | SOT266-1 | 20 | -20°C | 85°C | 65K |
12. | UPA1715G-E1 | Pch enhancement type power MOS FET | NEC | 8-P-SOP | - | - | - | 67K |
13. | UPA1715G-E2 | Pch enhancement type power MOS FET | NEC | 8-P-SOP | - | - | - | 67K |
14. | UPA1716G-E1 | Pch enhancement type power MOS FET | NEC | 8-P-SOP | - | - | - | 66K |
15. | UPA1716G-E2 | Pch enhancement type power MOS FET | NEC | 8-P-SOP | - | - | - | 66K |
16. | UPA1717G-E1 | P-channel enhancement type power MOS FET | NEC | 8-P-SOP | - | - | - | 65K |
17. | UPA1717G-E2 | P-channel enhancement type power MOS FET | NEC | 8-P-SOP | - | - | - | 65K |
18. | XP131A1715SR | 20V N channel power MOSFET | TOREX | SOP-8 | - | - | - | 60K |