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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 1. | MTB60N06HD | HDTMOS E-FET high energy power FET D2PAK for surface mount | MOT | DPAK | 4 | -55°C | 150°C | 280K |
| 2. | STB60N03L-10 | N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR | STM | - | - | - | - | 87K |
| 3. | STB60N06-14 | N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR | STM | - | - | - | - | 87K |
| 4. | STB60NE03L-10 | N-CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET | STM | - | - | - | - | 99K |
| 5. | STB60NE03L-12 | N-CHANNEL 30V - 0.009 - 60A - TO-220 STRIPFET POWER MOSFET | STM | - | - | - | - | 51K |
| 6. | STB60NE06-16 | N-CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET | STM | - | - | - | - | 115K |
| 7. | STB60NE06-16 | N-CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET | STM | - | - | - | - | 115K |
| 8. | STB60NE06L-16 | N-CHANNEL 60V - 0.014 OMH - 60A D2PAK STRIPFET POWER MOSFET | STM | - | - | - | - | 85K |
| 9. | STB60NF03L | N-CHANNEL 30V - 0.008 OHM - 60A D2PAK STRIPFET POWER MOSFET | STM | - | - | - | - | 48K |
| 10. | STB60NF06 | N-CHANNEL 60V 0.014 OHM 60A D2PAK STRIPFET POWER MOSFET | STM | - | - | - | - | 425K |
| 11. | STB60NF06L | N-CHANNEL 60V - 0.014 OHM - 60A D2PAK/TO-220 STRIPFET II POWER MOSFET | STM | - | - | - | - | 472K |
| 12. | STB60NH02L | N-CHANNEL 24V - 0.0085 OHM - 60A D2PAK STRIPFET III POWER MOSFET | STM | - | - | - | - | 423K |
| 13. | VTB6061 | Process photodiode. Isc = 350 microA, Voc = 490 mV at H = 100 fc, 2850 K. | PERK | TO-8 | 2 | -40°C | 110°C | 31K |
| 14. | VTB6061B | Process photodiode. Isc = 35 microA, Voc = 420 mV at H = 100 fc, 2850 K. | PERK | TO-8 | 2 | -40°C | 110°C | 31K |
| 15. | VTB6061CIE | Process photodiode. Sp = 120 nA/fc at H = 1.0fc, Sp = 11nA/lux at H = 1.0 lux. | PERK | TO-8 | 2 | -54°C | 50°C | 30K |
| 16. | VTB6061J | Process photodiode. Isc = 350 microA, Voc = 490 mV at H = 100 fc, 2850 K. | PERK | TO-8 | 2 | -40°C | 110°C | 33K |
| 17. | VTB6061UV | Process photodiode. Isc = 350 microA, Voc = 490 mV at H = 100 fc, 2850 K. | PERK | TO-8 | 3 | -40°C | 110°C | 33K |
| 18. | VTB6061UVJ | Process photodiode. Isc = 350 microA, Voc = 490 mV at H = 100 fc, 2850 K. | PERK | TO-8 | 3 | -40°C | 110°C | 32K |
