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P801 datasheet
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Found: 13 Displaying: 1 - 13| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size | | 1. | CP801 | Single-phase silicon bridge - P.C. MTG 3A, heat-sink MTG 8A . Max recurrent peak reverse voltage 100V. Max average rectified output 8.0A(at Tc=50), 3.0(at Ta=25). | PAJIT | CP-8 | 4 | -55°C | 125°C | 59K | | 2. | CP801 | 100 V single phase silicon bridge | TEL | CP | 4 | -55°C | 125°C | 114K | | 3. | CP801 | 100 V, 8 A, single-phase silicon bridge | TRSYS | CP | 4 | -55°C | 125°C | 114K | | 4. | GP801DCM18 | 1800V Hi-reliability chopper switch low voltage IGBT module | DYNEX | - | 12 | - | - | 158K | | 5. | GP801DCS18 | 1800V chopper switch low V IGBT module | DYNEX | - | 12 | - | - | 169K | | 6. | GP801DDM18 | 1800V Hi-reliability dual switch IGBT module | DYNEX | - | 12 | - | - | 142K | | 7. | GP801DDS18 | 1800V dual switch low V IGBT module | DYNEX | - | 12 | - | - | 143K | | 8. | GP801FSM18 | 1800V Hi-reliability dual switch low voltage IGBT module | DYNEX | - | 12 | - | - | 141K | | 9. | LP801 | 15 Watt, silicon gate enhancement mode RF power LDMOS transistor | POFET | - | 2 | -65°C | 150°C | 35K | | 10. | OP801SL | NPN silicon phototransistor | OPTEK | TO-18 | 3 | -65°C | 125°C | 360K | | 11. | OP801WSL | NPN silicon phototransistor | OPTEK | TO-18 | 3 | -65°C | 125°C | 342K | | 12. | TP801C04 | Schottky barrier diode | CALLM | - | 3 | -40°C | 125°C | 71K | | 13. | TP801C06 | Schottky barrier diode | CALLM | - | 3 | -40°C | 125°C | 74K |
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