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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 1. | NTE54 | Silicon complementary NPN transistor. High frequency driver for audio amplifier. | NTE | TO220 | 3 | -65°C | 150°C | 23K |
| 2. | NTE5400 | Silicon controlled rectifier (SCR). 0.8 Amp sensitive gate. Repetitive peak reverse voltage Vrrm = 30V. | NTE | TO92 | 3 | -40°C | 100°C | 18K |
| 3. | NTE5401 | Silicon controlled rectifier (SCR). 0.8 Amp sensitive gate. Repetitive peak reverse voltage Vrrm = 60V. | NTE | TO92 | 3 | -40°C | 100°C | 18K |
| 4. | NTE5402 | Silicon controlled rectifier (SCR). 0.8 Amp sensitive gate. Repetitive peak reverse voltage Vrrm = 100V. | NTE | TO92 | 3 | -40°C | 100°C | 18K |
| 5. | NTE5403 | Silicon controlled rectifier (SCR). 0.8 Amp sensitive gate. Repetitive peak reverse voltage Vrrm = 150V. | NTE | TO92 | 3 | -40°C | 100°C | 18K |
| 6. | NTE5404 | Silicon controlled rectifier (SCR). 0.8 Amp sensitive gate. Repetitive peak reverse voltage Vrrm = 200V. | NTE | TO92 | 3 | -40°C | 100°C | 18K |
| 7. | NTE5405 | Silicon controlled rectifier (SCR). 0.8 Amp sensitive gate. Repetitive peak reverse voltage Vrrm = 400V. | NTE | TO92 | 3 | -40°C | 100°C | 18K |
| 8. | NTE5406 | Silicon controlled rectifier (SCR). 0.8 Amp sensitive gate. Repetitive peak reverse voltage Vrrm = 600V. | NTE | TO92 | 3 | -40°C | 100°C | 18K |
| 9. | NTE5408 | Silicon controlled rectifier (SCR). 3 Amp sensitive gate. Repetitive peak reverse voltage Vrrm = 200V. | NTE | TO39 | 3 | -40°C | 100°C | 21K |
| 10. | NTE5409 | Silicon controlled rectifier (SCR). 3 Amp sensitive gate. Repetitive peak reverse voltage Vrrm = 400V. | NTE | TO39 | 3 | -40°C | 100°C | 21K |
| 11. | NTE5410 | Silicon controlled rectifier (SCR). 3 Amp sensitive gate. Repetitive peak reverse voltage Vrrm = 600V. | NTE | TO39 | 3 | -40°C | 100°C | 21K |
| 12. | NTE5412 | Silicon controlled rectifier (SCR). 4 Amp, sensitive gate. Repetitive peak voltage and reverse blocking voltage (Vdrm, Vrrm) 60V. | NTE | TO126 | 3 | -40°C | 110°C | 21K |
| 13. | NTE5412 | Silicon controlled rectifier (SCR). 4 Amp, sensitive gate. Repetitive peak voltage and reverse blocking voltage (Vdrm, Vrrm) 60V. | NTE | TO126 | 3 | -40°C | 110°C | 21K |
| 14. | NTE5413 | Silicon controlled rectifier (SCR). 4 Amp, sensitive gate. Repetitive peak voltage and reverse blocking voltage (Vdrm, Vrrm) 100V. | NTE | TO126 | 3 | -40°C | 110°C | 21K |
| 15. | NTE5414 | Silicon controlled rectifier (SCR). 4 Amp, sensitive gate. Repetitive peak voltage and reverse blocking voltage (Vdrm, Vrrm) 200V. | NTE | TO126 | 3 | -40°C | 110°C | 21K |
| 16. | NTE5415 | Silicon controlled rectifier (SCR). 4 Amp, sensitive gate. Repetitive peak voltage and reverse blocking voltage (Vdrm, Vrrm) 400V. | NTE | TO126 | 3 | -40°C | 110°C | 21K |
| 17. | NTE5416 | Silicon controlled rectifier (SCR). 4 Amp, sensitive gate. Repetitive peak voltage and reverse blocking voltage (Vdrm, Vrrm) 600V. | NTE | TO126 | 3 | -40°C | 110°C | 21K |
| 18. | NTE5417 | Silicon controlled rectifier (SCR). Repetitive peak reverse voltage Vrrm = 200V. RMS on-state current It = 10A. | NTE | TO220 | 3 | -40°C | 110°C | 18K |
| 19. | NTE5418 | Silicon controlled rectifier (SCR). Repetitive peak reverse voltage Vrrm = 400V. RMS on-state current It = 10A. | NTE | TO220 | 3 | -40°C | 110°C | 18K |
| 20. | NTE5419 | Silicon controlled rectifier (SCR). Repetitive peak reverse voltage Vrrm = 600V. RMS on-state current It = 10A. | NTE | TO220 | 3 | -40°C | 110°C | 18K |
