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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 1. | 1N1400 | Standard Rectifier (trr more than 500ns) | MSEMI | DO-8 | - | - | - | 120K |
| 2. | 1N1401 | Standard Rectifier (trr more than 500ns) | MSEMI | DO-8 | - | - | - | 120K |
| 3. | 1N1402 | Standard Rectifier (trr more than 500ns) | MSEMI | DO-8 | - | - | - | 120K |
| 4. | 1N1403 | Standard Rectifier (trr more than 500ns) | MSEMI | DO-8 | - | - | - | 120K |
| 5. | IRFN140 | HEXFET power mosfet | IRF | SMD-1 | 2 | -55°C | 150°C | 217K |
| 6. | IRFN140SMD | 100V Vdss N-Channel FET (field effect transistor) | SAMEL | SMD1 | - | - | - | 22K |
| 7. | IXBH15N140 | 1400V high voltage BIMOSFET monolithic bipolar MOS transistor | IXYS | TO-247AD | 3 | -55°C | 150°C | 63K |
| 8. | IXBH20N140 | 1400V high voltage BIMOSFET monolithic bipolar MOS transistor | IXYS | TO-247AD | 3 | -55°C | 150°C | 61K |
| 9. | IXBH9N140G | 1400V high volatge BIMOSFET | IXYS | ISOPLUS247 | 2 | -55°C | 175°C | 63K |
| 10. | IXBT40N140 | 1400V high voltage BIMOSFET | IXYS | - | 5 | -55°C | 150°C | 96K |
| 11. | IXSH35N140A | 1400V high speed IGBT | IXYS | TO-247 | 3 | -55°C | 150°C | 69K |
| 12. | PACDN1404C | ESD protection array | CAMD | Chip scale | 6 | -40°C | 85°C | 51K |
| 13. | PACDN1408C | ESD protection array | CAMD | Chip scale | 6 | -40°C | 85°C | 51K |
| 14. | RL1N1400F | Photoflash rectifier. Max recurrent peak reverse voltage 1400V, max RMS voltage 960V, max DC blocking voltage 1400V. Max average forward current 0.5A at Ta=55degC. | RECTR | A-405 | 2 | -65°C | 175°C | 23K |
| 15. | TC54VN1401ECBTR | Voltage detector, Nch output, 1.4V, +/-1% | MCHIP | SOT-23A | 3 | -40°C | 85°C | 215K |
| 16. | TC54VN1401EMBTR | Voltage detector, Nch open drain, 1.4V, +/-1% | MCHIP | SOT-89 | 3 | -40°C | 85°C | 215K |
| 17. | WT7513-N140WT | The WT7513 provides protection circuits, power good output (PGO) | WTREN | DIP | 14 | - | - | 60K |
| 18. | WT7515-N140WT | The WT7515 provides protection circuits, power good output (PGO) | WTREN | DIP | 14 | - | - | 64K |
| 19. | ZVN1409A | N-channel enhancement mode vertical DMOS FET | ZETEX | - | 3 | -55°C | 150°C | 49K |
| 20. | ZVN1409A | N-channel enhancement mode vertical DMOS FET | ZETEX | - | 3 | -55°C | 150°C | 49K |
