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HBD datasheet



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Found: 15      Displaying: 1 - 15
#
Part:
Description:
Manuf.
Package
Pins
T°min
T°max
PDF size
1.
HBD040YED-A60 Watt, input voltage range:18-36V, output voltage 3.3/2.5V (2.85A) DC/DC converter
PWONE
DIP
10
-40°C
100°C
183K
2.
HBD040YGE-A60 Watt, input voltage range:18-36V, output voltage 5/3.3V (3.02A) DC/DC converter
PWONE
DIP
10
-40°C
100°C
183K
3.
HBD040ZED-A60 Watt, input voltage range:34-75V, output voltage 3.3/2.5V (1.62A) DC/DC converter
PWONE
DIP
10
-40°C
100°C
183K
4.
HBD040ZGE-A60 Watt, input voltage range:34-75V, output voltage 5/3.3V (1.51A) DC/DC converter
PWONE
DIP
10
-40°C
100°C
183K
5.
HBD060ZGE-A60 Watt, input voltage range:34-75V, output voltage 5/3.3V (2.27A) DC/DC converter
PWONE
DIP
10
-40°C
100°C
183K
6.
HBD13680V 1.5A PNP power transistor
HSMC
TO-126
3
-50°C
150°C
36K
7.
HBD13980V 1.5A NPN power transistor
HSMC
TO-126
3
-65°C
150°C
36K
8.
HBD14080V 1.5A PNPpower transistor
HSMC
TO-126
3
-65°C
150°C
36K
9.
HBD2375V NPN epitaxial planar transistor for medium power and switching applications
HSMC
TO-126ML
3
-65°C
150°C
24K
10.
HBD2382A 5V PNP epitaxial planar transistor for medium power linear and switching applicications
HSMC
TO-126ML
3
-
-
24K
11.
HBD437T1A complementary silicon power transistor for use in medium power linear and switching applications
HSMC
TO-126
3
-
-
37K
12.
HBD438T1A complementary silicon power transistor for use in medium power linear and switching applications
HSMC
TO-126
3
-
-
34K
13.
HBD6754A 5V NPN epitaxial planar transistor for use as output devices in complementary general purpose amplifier applications
HSMC
TO-126ML
3
-
-
32K
14.
HBD6774A 5V NPN epitaxial planar transistor for use as output devices in complementary general purpose amplifier applications
HSMC
TO-126ML
3
-
-
32K
15.
HBD6784A 5V NPN epitaxial planar transistor for use as output devices in complementary general purpose amplifier applications
HSMC
TO-126ML
3
-
-
24K
1


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