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Found: 52      Displaying: 1 - 20
#
Part:
Description:
Manuf.
Package
Pins
T°min
T°max
PDF size
1.
IRG4BC10KInsulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 2.39V @ VGE = 15V, IC = 5.0A
IRF
-
3
-55°C
150°C
158K
2.
IRG4BC10KDInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 2.39V @ VGE = 15V, IC = 5.0A
IRF
-
3
-55°C
150°C
210K
3.
IRG4BC10SInsulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.10V @ VGE = 15V, IC = 2.0A
IRF
-
3
-55°C
150°C
157K
4.
IRG4BC10SDInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.10V @ VGE = 15V, IC = 2.0A
IRF
-
3
-55°C
150°C
210K
5.
IRG4BC10SD-LInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.10V @ VGE = 15V, IC = 2.0A
IRF
TO-262
3
-55°C
150°C
217K
6.
IRG4BC10SD-SInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.10V @ VGE = 15V, IC = 2.0A
IRF
DDPak
3
-55°C
150°C
217K
7.
IRG4BC10UDInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 2.150V @ VGE = 15V, IC = 5.0A, tf(typ) = 140ns.
IRF
-
3
-55°C
150°C
184K
8.
IRG4BC15MDInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.88V @ VGE = 15V, IC = 8.5A
IRF
-
3
-55°C
150°C
256K
9.
IRG4BC15UDInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 2.02V @ VGE = 15V, IC = 7.8A
IRF
-
3
-55°C
150°C
255K
10.
IRG4BC15UD-LInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 2.02V @ VGE = 15V, IC = 7.8A
IRF
TO-262
3
-55°C
150°C
210K
11.
IRG4BC15UD-SInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 2.02V @ VGE = 15V, IC = 7.8A
IRF
DDPak
3
-55°C
150°C
210K
12.
IRG4BC15UD-SInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 2.02V @ VGE = 15V, IC = 7.8A
IRF
DDPak
3
-55°C
150°C
210K
13.
IRG4BC20Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.66V @ VGE = 15V, IC = 9.0A
IRF
-
3
-55°C
150°C
161K
14.
IRG4BC20FDInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.66V @ VGE = 15V, IC = 9.0A
IRF
-
3
-55°C
150°C
222K
15.
IRG4BC20FD-SInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.66V @ VGE = 15V, IC = 9.0A
IRF
DDPak
3
-55°C
150°C
222K
16.
IRG4BC20KInsulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 2.27V @ VGE = 15V, IC = 9.0A
IRF
-
3
-55°C
150°C
138K
17.
IRG4BC20K-SInsulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 2.27V @ VGE = 15V, IC = 9.0A
IRF
DDPak
3
-55°C
150°C
162K
18.
IRG4BC20KDInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 2.27V @ VGE = 15V, IC = 9.0A
IRF
-
3
-55°C
150°C
199K
19.
IRG4BC20KD-SInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 2.27V @ VGE = 15V, IC = 9.0A
IRF
DDPak
3
-55°C
150°C
222K
20.
LNG4B4NPYRound Type visible light emitting diode
PANAS
-
-
-
-
29K
1 2 3


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