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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 1. | K4E640412D-JC/L | 16M x 4 bit CMOS dynamic RAM with extended data out. 3.3V, 4K refresh cycle. | SMSNG | SOJ | 32 | 0°C | 70°C | 415K |
| 2. | K4E640412D-TC/L | 16M x 4 bit CMOS dynamic RAM with extended data out. 3.3V, 4K refresh cycle. | SMSNG | TSOP (II) | 32 | 0°C | 70°C | 415K |
| 3. | K4E640412D-TC/L | 16M x 4 bit CMOS dynamic RAM with extended data out. 3.3V, 4K refresh cycle. | SMSNG | TSOP (II) | 32 | 0°C | 70°C | 415K |
| 4. | K4E640812B-TC-45 | 8M x 8bit CMOS dynamic RAM with extended data out, 45ns | SMSNG | TSOP II | 32 | 0°C | 70°C | 416K |
| 5. | K4E640812B-TC-5 | 8M x 8bit CMOS dynamic RAM with extended data out, 50ns | SMSNG | TSOP II | 32 | 0°C | 70°C | 416K |
| 6. | K4E640812B-TC-6 | 8M x 8bit CMOS dynamic RAM with extended data out, 60ns | SMSNG | TSOP II | 32 | 0°C | 70°C | 416K |
| 7. | K4E640812B-TCL-45 | 8M x 8bit CMOS dynamic RAM with extended data out, 45ns | SMSNG | TSOP II | 32 | 0°C | 70°C | 416K |
| 8. | K4E640812B-TCL-5 | 8M x 8bit CMOS dynamic RAM with extended data out, 50ns | SMSNG | TSOP II | 32 | 0°C | 70°C | 416K |
| 9. | K4E640812B-TCL-6 | 8M x 8bit CMOS dynamic RAM with extended data out, 60ns | SMSNG | TSOP II | 32 | 0°C | 70°C | 416K |
| 10. | NTE6400 | Unijunction transistor. Interbase voltage 35V. | NTE | - | 3 | -65°C | 140°C | 19K |
| 11. | NTE6400A | Unijunction transistor. Interbase voltage 55V. | NTE | - | 3 | -65°C | 140°C | 19K |
| 12. | NTE6401 | Unijunction transistor. | NTE | - | 3 | -65°C | 125°C | -- |
| 13. | NTE6402 | Programmable unijunction transistor (PUT). | NTE | TO98 | 3 | -50°C | 100°C | 21K |
| 14. | NTE6402 | Programmable unijunction transistor (PUT). | NTE | TO92 | 3 | -50°C | 100°C | 21K |
| 15. | NTE6403 | Integrated circuit. Silicon bilateral switch (SBS). | NTE | - | 3 | -55°C | 125°C | 22K |
| 16. | NTE6404 | Silicon unilateral switch (SUS). | NTE | - | 3 | -55°C | 125°C | 19K |
| 17. | NTE6407 | Bilateral trigger diode (DIAC). Breakover voltage (forward and reverse) 28V (typ). | NTE | DO35 | 2 | -40°C | 125°C | 18K |
| 18. | NTE6407 | Bilateral trigger diode (DIAC). Breakover voltage (forward and reverse) 28V (typ). | NTE | DO35 | 2 | -40°C | 125°C | 18K |
| 19. | NTE6408 | Bilateral trigger diode (DIAC). Breakover voltage (forward and reverse) 32V (typ). | NTE | DO35 | 2 | -40°C | 125°C | 18K |
| 20. | NTE6409 | Unijunction transistor. | NTE | - | 3 | -65°C | 125°C | 20K |
