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# | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
1. | D1N20 | General purpose rectifier | SHIND | AX057 | - | - | - | 300K |
2. | D1N60 | General purpose rectifier | SHIND | AX057 | - | - | - | 300K |
3. | D1NF60 | Single super fast recovery rectifier | SHIND | AX057 | - | - | - | 348K |
4. | D1NL20U | Single super fast recovery rectifier | SHIND | AX057 | - | - | - | 385K |
5. | D1NL40 | Single super fast recovery rectifier | SHIND | AX057 | - | - | - | 383K |
6. | D1NS4 | Single Schottky barrier rectifier | SHIND | AX057 | - | - | - | 552K |
7. | D1NS6 | Single Schottky barrier rectifier | SHIND | AX057 | - | - | - | 579K |
8. | FQD1N50 | 500V N-Channel MOSFET | FAIR | - | - | - | - | 740K |
9. | HGTD1N120BNS | 5.3A, 1200V, NPT Series N-Channel IGBT | INTRS | - | - | - | - | 71K |
10. | HGTD1N120CNS | 6.2A, 1200V, NPT Series N-Channel IGBT | INTRS | - | - | - | - | 77K |
11. | MLD1N06CL | Voltage clamped current limiting mosfet | MOT | DPAK | 4 | -65°C | 150°C | 163K |
12. | MTD1N50E | TMOS E-FET power field effect transistor D2PAK for surface mount | MOT | DPAK | 4 | -55°C | 150°C | 267K |
13. | MTD1N60E | TMOS E-FET power field effect transistor D2PAK for surface mount | MOT | DPAK | 4 | -55°C | 150°C | 266K |
14. | MTD1N80E | TMOS E-FET power field effect transistor D2PAK for surface mount | MOT | DPAK | 4 | -55°C | 150°C | 269K |
15. | STD1NB50 | N-CHANNEL 500V -7.5 OHM -1.4A IPAK POWERMESH MOSFET | STM | - | - | - | - | 87K |
16. | STD1NB60 | N-CHANNEL 600V - 7.4 OHM - 1A - IPAK/DPAK POWERMESH MOSFET | STM | - | - | - | - | 66K |
17. | STD1NB80 | N-CHANNEL 800V - 16 OHM - 1A - DPAK/IPAK POWERMESH MOSFET | STM | - | - | - | - | 66K |
18. | STD1NB80-1 | N-CHANNEL 800V - 16 OHM - 1A - IPAK POWERMESH MOSFET | STM | - | - | - | - | 56K |
19. | STD1NC40 | N-CHANNEL 400V - 8 OHM - 1A - TO-251 POWERMESH MOSFET | STM | - | - | - | - | 51K |