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C30S datasheet



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Found: 31      Displaying: 1 - 20
#
Part:
Description:
Manuf.
Package
Pins
T°min
T°max
PDF size
1.
BZT52-C30SSurface mount silicon zener diode. Power 200 mWatts. Nominal zener voltage 30 V
PAJIT
SOD-323
2
-55°C
150°C
78K
2.
IRFBC30SHEXFET power MOSFET. VDSS = 600V, RDS(on) = 2.2 Ohm, ID = 3.6A
IRF
DDPak
3
-55°C
150°C
362K
3.
IRG4BC30SInsulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.4V @ VGE = 15V, IC = 18A
IRF
-
3
-55°C
150°C
161K
4.
IRG4PC30SInsulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.4V @ VGE = 15V, IC = 18A
IRF
TO-247AC
3
-55°C
150°C
120K
5.
IRGBC30SInsulated gate bipolar transistor
IRF
-
3
-55°C
150°C
252K
6.
IRGPC30SInsulated gate bipolar transistor
IRF
TO-247AC
3
-55°C
150°C
253K
7.
PT2128A-C30SRemote fan controller IC
PTC
SO
16
-
-
408K
8.
PT2128A-C30SRemote fan controller IC
PTC
SO
20
-
-
408K
9.
PT2128A-C30SRemote fan controller IC
PTC
SO
24
-
-
408K
10.
PT2128A-C30SRemote fan controller IC
PTC
SO
16
-
-
408K
11.
RC30S01GSilicon GPP cell rectifier. Max repetitive peak reverse voltage 100 V. Max average forward current 30 A.
SSE
-
-
-50°C
150°C
17K
12.
RC30S02GSilicon GPP cell rectifier. Max repetitive peak reverse voltage 200 V. Max average forward current 30 A.
SSE
-
-
-50°C
150°C
17K
13.
RC30S04GSilicon GPP cell rectifier. Max repetitive peak reverse voltage 400 V. Max average forward current 30 A.
SSE
-
-
-50°C
150°C
17K
14.
RC30S06GSilicon GPP cell rectifier. Max repetitive peak reverse voltage 600 V. Max average forward current 30 A.
SSE
-
-
-50°C
150°C
17K
15.
RC30S08GSilicon GPP cell rectifier. Max repetitive peak reverse voltage 800 V. Max average forward current 30 A.
SSE
-
-
-50°C
150°C
17K
16.
RC30S10GSilicon GPP cell rectifier. Max repetitive peak reverse voltage 1000 V. Max average forward current 30 A.
SSE
-
-
-50°C
150°C
17K
17.
SD1053C30S30LFast recovery diode
IRF
DO-200AB
2
-40°C
150°C
507K
18.
SD263C30S50LFast recovery diode
IRF
DO-200AB
2
-40°C
125°C
354K
19.
SD553C30S50LFast recovery diode
IRF
DO-200AB
2
-40°C
125°C
351K
20.
SD853C30S50KFast recovery diode
IRF
DO-200AC
2
-40°C
125°C
403K
1 2


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