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6n60 datasheet



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Found: 36      Displaying: 1 - 20
#
Part:
Description:
Manuf.
Package
Pins
T°min
T°max
PDF size
1.
GMG116N60FF1600 V single-phase rectifier bridge
GPSEM
-
-
-
-
159K
2.
GMG116N60FS1600 V single-phase rectifier bridge
GPSEM
-
-
-
-
159K
3.
GMG116N60LL1600 V single-phase rectifier bridge
GPSEM
-
-
-
-
159K
4.
GMG116N60SF1600 V single-phase rectifier bridge
GPSEM
-
-
-
-
159K
5.
GMG116N60SS1600 V single-phase rectifier bridge
GPSEM
-
-
-
-
159K
6.
IRFIB6N60AHEXFET power MOSFET. VDSS = 600V, RDS(on) = 0.75 Ohm, ID = 5.5 A
IRF
TO-220 FULLPAK
3
-55°C
150°C
149K
7.
IXFH26N60Q600V HiPerFET power MOSFET Q-class
IXYS
TO-247AD
3
-55°C
150°C
107K
8.
IXFK26N60Q600V HiPerFET power MOSFET Q-class
IXYS
TO-264AA
3
-55°C
150°C
103K
9.
IXFK36N60600V HiPerFET power MOSFET
IXYS
TO-264
3
-55°C
150°C
192K
10.
IXFN36N60600V HiPerFET power MOSFET
IXYS
SOT-227B
4
-55°C
150°C
192K
11.
IXFR26N60Q600V HiPerFET power MOSFET
IXYS
ISOPLUS247
3
-55°C
150°C
34K
12.
IXFT26N60Q600V HiPerFET power MOSFET Q-class
IXYS
TO-268
3
-55°C
150°C
107K
13.
IXFX26N60Q600V HiPerFET power MOSFET Q-class
IXYS
ISOPLUS247
3
-55°C
150°C
103K
14.
MTB6N60ETMOS E-FET high energy power FET D2PAK for surface mount
MOT
DPAK
4
-55°C
150°C
192K
15.
MTB6N60E1TMOS E-FET high energy power FET D2PAK for surface mount
MOT
DPAK
4
-55°C
150°C
160K
16.
MTP6N60N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
STM
-
-
-
-
153K
17.
MTP6N60ETMOS E-FET power field effect transistor
MOT
-
4
-55°C
150°C
156K
18.
PHB6N60E600 V, power MOS transistor avalanche energy rated
PHLPS
SOT
3
-55°C
150°C
74K
19.
PHP6N60E600 V, power MOS transistor avalanche energy rated
PHLPS
SOT
3
-55°C
150°C
74K
20.
STP6N60FIN-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
STM
-
-
-
-
151K
1 2


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