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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 1. | 1N6519 | 10000 V rectifier 0.5-2 mA forward current,70 ns recovery time | VMI | - | 2 | -65°C | 175°C | 95K |
| 2. | 2N6519 | PNP Epitaxial Silicon Transistor - High Voltage Transistor | FAIR | - | - | - | - | 26K |
| 3. | 2N6519 | Ic=500mA, Vce=10V transistor | MCC | - | - | - | - | 427K |
| 4. | 2N6519 | High Voltage Transistors | ON | - | 3 | - | - | 229K |
| 5. | 2N6519 | High voltage transistor. Collector-emitter voltage: Vceo = -300V. Collector-base voltage: Vcbo = -300V. Collector dissipation: Pc(max) = 0.625W. | USHA | - | 3 | 0°C | 150°C | 50K |
| 6. | 2N6519RLRA | High Voltage Transistors | ON | - | 3 | - | - | 229K |
| 7. | 5962-9651901QCX | RadHard MSI: SMD. Quadruple 2-input AND gate. Class Q, QML. Lead finish optional. Total dose none. | UTMC | Ceramic DIP | 14 | -55°C | 125°C | 10M |
| 8. | 5962-9651901QXC | RadHard MSI: SMD. Quadruple 2-input AND gate. Class Q, QML. Lead finish gold. Total dose none. | UTMC | Ceramic flatpack | 14 | -55°C | 125°C | 10M |
| 9. | 5962-9651901VCA | RadHard MSI: SMD. Quadruple 2-input AND gate. Class V, QML. Lead finish solder. Total dose none. | UTMC | Ceramic DIP | 14 | -55°C | 125°C | 10M |
| 10. | 5962-9651901VCC | RadHard MSI: SMD. Quadruple 2-input AND gate. Class V, QML. Lead finish gold. Total dose none. | UTMC | Ceramic DIP | 14 | -55°C | 125°C | 10M |
| 11. | 5962-9651901VXA | RadHard MSI: SMD. Quadruple 2-input AND gate. Class V, QML. Lead finish solder. Total dose none. | UTMC | Ceramic flatpack | 14 | -55°C | 125°C | 10M |
| 12. | 5962-9651901VXC | RadHard MSI: SMD. Quadruple 2-input AND gate. Class V, QML. Lead finish gold. Total dose none. | UTMC | Ceramic flatpack | 14 | -55°C | 125°C | 10M |
| 13. | 5962R9651901QCA | RadHard MSI: SMD. Quadruple 2-input AND gate. Class Q, QML. Lead finish solder. Total dose 1E5 rads(Si). | UTMC | Ceramic DIP | 14 | -55°C | 125°C | 10M |
| 14. | 5962R9651901VCC | RadHard MSI: SMD. Quadruple 2-input AND gate. Class V, QML. Lead finish gold. Total dose 1E5 rads(Si). | UTMC | Ceramic DIP | 14 | -55°C | 125°C | 10M |
| 15. | 5962R9651901VXA | RadHard MSI: SMD. Quadruple 2-input AND gate. Class V, QML. Lead finish solder. Total dose 1E5 rads(Si). | UTMC | Ceramic flatpack | 14 | -55°C | 125°C | 10M |
| 16. | 5962R9651901VXA | RadHard MSI: SMD. Quadruple 2-input AND gate. Class V, QML. Lead finish solder. Total dose 1E5 rads(Si). | UTMC | Ceramic flatpack | 14 | -55°C | 125°C | 10M |
| 17. | 5962R9651901VXC | RadHard MSI: SMD. Quadruple 2-input AND gate. Class V, QML. Lead finish gold. Total dose 1E5 rads(Si). | UTMC | Ceramic flatpack | 14 | -55°C | 125°C | 10M |
| 18. | 5962R9651901VXX | RadHard MSI: SMD. Quadruple 2-input AND gate. Class V, QML. Lead finish optional. Total dose 1E5 rads(Si). | UTMC | Ceramic flatpack | 14 | -55°C | 125°C | 10M |
| 19. | 5962R9651901VXX | RadHard MSI: SMD. Quadruple 2-input AND gate. Class V, QML. Lead finish optional. Total dose 1E5 rads(Si). | UTMC | Ceramic flatpack | 14 | -55°C | 125°C | 10M |
| 20. | MPS6519 | 4V, 350mW PNP silicon planar epitaxial transistor | ME | TO-92A | 3 | -55°C | 150°C | 173K |
