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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 1. | 1N5519 | 0.4 W, low voltage avalanche diode. Nominal zener voltage 3.6 V. Test current 20 mAdc. +-20% tolerance. | JGD | DO-35 | 2 | -65°C | 200°C | 243K |
| 2. | 1N5519 | Nom zener voltage:3.6V; measured from 1000-3000Hz; low voltage avalanche zener diode; high performance: low noise, low leakage | KNOX | DO-7 | - | - | - | 39K |
| 3. | 1N5519A | 0.4 W, low voltage avalanche diode. Nominal zener voltage 3.6 V. Test current 20 mAdc. +-10% tolerance. | JGD | DO-35 | 2 | -65°C | 200°C | 243K |
| 4. | 1N5519B | 3.6 volt, zener diode | CDIDI | DO-35 | 2 | -65°C | 175°C | 99K |
| 5. | 1N5519B | 0.4 W, low voltage avalanche diode. Nominal zener voltage 3.6 V. Test current 20 mAdc. +-5% tolerance. | JGD | DO-35 | 2 | -65°C | 200°C | 243K |
| 6. | 1N5519B | Low Voltage Avalanche Zener | MSEMI | DO-7 | - | - | - | 83K |
| 7. | 1N5519B | Low Voltage Avalanche Zener | MSEMI | DO-35 | - | - | - | 81K |
| 8. | 1N5519B-1 | Low Voltage Avalanche Zener | MSEMI | DO-35 | - | - | - | 81K |
| 9. | 1N5519B-1 | Low Voltage Avalanche Zener | MSEMI | DO-35 | - | - | - | 81K |
| 10. | 1N5519BUR-1 | Low Voltage Avalanche Zener | MSEMI | DO-213AA | - | - | - | 81K |
| 11. | 1N5519C | 0.4 W, low voltage avalanche diode. Nominal zener voltage 3.6 V. Test current 20 mAdc. +-2% tolenrance. | JGD | DO-35 | 2 | -65°C | 200°C | 243K |
| 12. | 1N5519D | 0.4 W, low voltage avalanche diode. Nominal zener voltage 3.6 V. Test current 20 mAdc. +-1% tolerance. | JGD | DO-35 | 2 | -65°C | 200°C | 243K |
| 13. | 2SC5519 | Silicon NPN triple diffusion mesa type power transistor | PANAS | - | - | - | - | 35K |
| 14. | 8551901FA | 8-BIT ADDRESSABLE LATCHES | TI | W | 16 | -55°C | 125°C | 134K |
| 15. | CD5519B | 3.6 V, Zener diode chip | CDIDI | - | - | -65°C | 175°C | 114K |
| 16. | CDLL5519B | 3.6 volt, zener diode | CDIDI | DO-213AA | - | -65°C | 175°C | 94K |
| 17. | NTE5519 | Silicon controlled rectifier (SCR). Repetitive peak reverse voltage Vrrm = 600V. RMS on-state current It(rms) = 35A. | NTE | - | 3 | -40°C | 150°C | 18K |
| 18. | NTE5519 | Silicon controlled rectifier (SCR). Repetitive peak reverse voltage Vrrm = 600V. RMS on-state current It(rms) = 35A. | NTE | - | 3 | -40°C | 150°C | 18K |
| 19. | SZ5519 | 19 V, 3 W, surface mount silicon zener diode | EIC | SMA | 2 | -55°C | 150°C | 28K |
