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4n60 datasheet
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Found: 48 Displaying: 1 - 20| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size | | 1. | HGTG24N60D1 | 24A, 600V N-Channel IGBT | INTRS | - | - | - | - | 32K | | 2. | HGTG24N60D1D | 24A, 600V N-Channel IGBT with Anti-Parallel Ultrafast Diode | INTRS | - | - | - | - | 35K | | 3. | IXFK44N60 | 600V HiPerFET power MOSFET | IXYS | TO-264AA | 3 | -55°C | 150°C | 104K | | 4. | IXFN44N60 | 600V HiPerFET power MOSFET | IXYS | SOT-227B | 4 | -55°C | 150°C | 128K | | 5. | IXFX44N60 | 600V HiPerFET power MOSFET | IXYS | ISOPLUS247 | 4 | -55°C | 150°C | 104K | | 6. | IXGH24N60B | 500V HiPerFAST IGBT | IXYS | TO-247 | 3 | -55°C | 150°C | 67K | | 7. | IXGH24N60C | 600V HiPerFAST IGBT | IXYS | TO-247AD | 3 | -40°C | 85°C | 53K | | 8. | IXGH24N60CD1 | 600V HiPerFAST IGBT with diode | IXYS | TO-247AD | 3 | -55°C | 150°C | 103K | | 9. | IXGR24N60C | 600V HiPerFAST IGBT | IXYS | ISOPLUS247 | 3 | -40°C | 150°C | 56K | | 10. | IXGT24N60C | 600V HiPerFAST IGBT | IXYS | TO-268 | 3 | -40°C | 85°C | 53K | | 11. | IXGT24N60CD1 | 600V HiPerFAST IGBT with diode | IXYS | TO-268 | 3 | -55°C | 150°C | 103K | | 12. | IXSH24N60 | 600V HiPerFAST IGBT | IXYS | TO-247 | 3 | -55°C | 150°C | 35K | | 13. | IXSH24N60A | 600V HiPerFAST IGBT | IXYS | TO-247 | 3 | -55°C | 150°C | 35K | | 14. | IXSH24N60AU1 | 600V HiPerFAST IGBT with diode | IXYS | TO-247 | 3 | -55°C | 150°C | 37K | | 15. | IXSH24N60U1 | 600V HiPerFAST IGBT with diode | IXYS | TO-247 | 3 | -55°C | 150°C | 37K | | 16. | MGP14N60E | Insulated gate bipolar transistor | MOT | - | 3 | -55°C | 150°C | 125K | | 17. | MGP14N60E | Insulated Gate Bipolar Transistor N-Channel | ON | TO-220 | 3 | - | - | 121K | | 18. | MGP4N60E | Insulated Gate Bipolar Transistor N-Channel | ON | TO-220 | 3 | - | - | 120K | | 19. | MGP4N60ED | Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel | ON | TO-220 | 3 | - | - | 146K | | 20. | MGW14N60ED | Insulated Gate Bipolar Transistor | ON | TO-247 | 3 | - | - | 154K |
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