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3144 datasheet



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Found: 19      Displaying: 1 - 19
#
Part:
Description:
Manuf.
Package
Pins
T°min
T°max
PDF size
1.
2SC3144NPN epitaxial planar silicon darlington transistor, 60V/3A for high-speed driver application
SANYO
2010C
3
-
-
106K
2.
2SC3144NPN transistors for 60V/3A for high-speed drivers applications
SANYO
-
3
-55°C
150°C
117K
3.
A3144ELTSensitive hall-effect switche for high-temperature operation
AMS
SOT-89/TO-243AA
3
-40°C
85°C
154K
4.
A3144EUSensitive hall-effect switche for high-temperature operation
AMS
mini-SIP
3
-40°C
85°C
154K
5.
A3144EUASensitive hall-effect switche for high-temperature operation
AMS
ultra-mini-SIP
3
-40°C
85°C
154K
6.
A3144LLTSensitive hall-effect switche for high-temperature operation
AMS
SOT-89/TO-243AA
3
-40°C
150°C
154K
7.
A3144LUSensitive hall-effect switche for high-temperature operation
AMS
mini-SIP
3
-40°C
150°C
154K
8.
A3144LUASensitive hall-effect switche for high-temperature operation
AMS
ultra-mini-SIP
3
-40°C
150°C
154K
9.
HYB314400BJ-501M x 4bit DRAM
SMNS
P-SOJ-26/20-2 300 mi
26
0°C
70°C
126K
10.
HYB314400BJ-601M x 4bit DRAM
SMNS
P-SOJ-26/20-2 300 mi
26
0°C
70°C
126K
11.
HYB314405BJ-501M x 4bit EDO-DRAM
SMNS
P-SOJ-26/20-5
26
0°C
70°C
1M
12.
HYB314405BJ-601M x 4bit EDO-DRAM
SMNS
P-SOJ-26/20-5
26
0°C
70°C
1M
13.
HYB314405BJ-701M x 4bit EDO-DRAM
SMNS
P-SOJ-26/20-5
26
0°C
70°C
1M
14.
HYB314405BJL-501M x 4bit EDO-DRAM
SMNS
P-SOJ-26/20-5
26
0°C
70°C
1M
15.
HYB314405BJL-601M x 4bit EDO-DRAM
SMNS
P-SOJ-26/20-5
26
0°C
70°C
1M
16.
HYB314405BJL-701M x 4bit EDO-DRAM
SMNS
P-SOJ-26/20-5
26
0°C
70°C
1M
17.
LNR314401LED lamp source for panel display unit. Manuscript size (B4 Type)
PANAS
-
-
-
-
20K
18.
MC13144DVHF - 2.0 GHz low noise amplifier with programmable blas
MOT
SO-8
8
-40°C
85°C
135K
19.
PST3144CMOS system reset
MITSM
SOT-25
4
-30°C
85°C
177K
1


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