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2sc10 datasheet
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Found: 10 Displaying: 1 - 10| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size | | 1. | 2SC1008 | Low frequency amplifier medium speed switching. Collector-base voltage Vcbo = 80V. Collector-emitter voltage Vceo = 60V. Emitter-base voltage Vebo = 8V. Collector dissipation Pc(max) = 800mW. Collector current Ic = 700mA. | USHA | - | 3 | 0°C | 150°C | 73K | | 2. | 2SC1009 | High voltage amplifier. Collector-base voltage Vcbo = 160V. Collector-emitter voltage Vceo = 140V. Emitter-base voltage Vebo = 8V. Collector dissipation Pc(max) = 800mW. Collector current Ic = 700mA. | USHA | - | 3 | 0°C | 150°C | 72K | | 3. | 2SC1009A-L | Silicon transistor | NEC | - | - | - | - | 325K | | 4. | 2SC1009A-T1B | Silicon transistor | NEC | - | - | - | - | 325K | | 5. | 2SC1009A-T2B | Silicon transistor | NEC | - | - | - | - | 325K | | 6. | 2SC1047 | Silicon NPN epitaxial planer type small signal transistor | PANAS | - | - | - | - | 56K | | 7. | 2SC1047 | Silicon epitaxial planar transistor. High power, primarily for use in audio and general purpose | WINGS | MT-100 | 3 | - | - | 80K | | 8. | 2SC1050 | Silicon epitaxial planar transistor. NPN high frequency, high power, primarily for use in audio and general purpose | WINGS | TO-3 | 3 | - | - | 188K | | 9. | 2SC1061 | 3Ampere NPN silicon power transistor | MOSP | TO-220 | 3 | -55°C | 150°C | 110K | | 10. | 2SC1061 | NPN epitaxial silicon transistor. Low frequence power amplifier | WINGS | TO-220 | 3 | - | - | 69K |
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