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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 1. | 2N6515 | Ic=500mA, Vce=10V transistor | MCC | - | - | - | - | 427K |
| 2. | 2N6515 | High Voltage Transistors | ON | - | 3 | - | - | 229K |
| 3. | 2N6515 | High voltage transistor. Collector-emitter voltage: Vceo = 250V. Collector-base voltage: Vcbo = 250V. Collector dissipation: Pc(max) = 625mW. | USHA | - | 3 | 0°C | 150°C | 47K |
| 4. | 2N6515RLRM | High Voltage Transistors | ON | - | 3 | - | - | 229K |
| 5. | 2N6516 | High voltage transistor. Collector-emitter voltage: Vceo = 250V. Collector-base voltage: Vcbo = 250V. Collector dissipation: Pc(max) = 625mW. | USHA | - | 3 | 0°C | 150°C | 69K |
| 6. | 2N6517 | NPN Epitaxial Silicon Transistor - High Voltage Transistor | FAIR | - | - | - | - | 26K |
| 7. | 2N6517 | Ic=500mA, Vce=10V transistor | MCC | - | - | - | - | 427K |
| 8. | 2N6517 | High Voltage Transistors | ON | - | 3 | - | - | 229K |
| 9. | 2N6517 | High voltage transistor. Collector-emitter voltage: Vceo = 350V. Collector-base voltage: Vcbo = 350V. Collector dissipation: Pc(max) = 625mW. | USHA | - | 3 | 0°C | 150°C | 47K |
| 10. | 2N6517 | NPN silicon planar medium power transistor | ZETEX | - | 3 | -55°C | 200°C | 27K |
| 11. | 2N6517 | NPN silicon planar medium power transistor | ZETEX | - | 3 | -55°C | 200°C | 27K |
| 12. | 2N6517RLRA | High Voltage Transistors | ON | - | 3 | - | - | 229K |
| 13. | 2N6517RLRP | High Voltage Transistors | ON | - | 3 | - | - | 229K |
| 14. | 2N6518 | PNP Epitaxial Silicon Transistor - High Voltage Transistor | FAIR | - | - | - | - | 26K |
| 15. | 2N6518 | High voltage transistor. Collector-emitter voltage: Vceo = -250V. Collector-base voltage: Vcbo = -250V. Collector dissipation: Pc(max) = 0.625W. | USHA | - | 3 | 0°C | 150°C | 50K |
| 16. | 2N6519 | Ic=500mA, Vce=10V transistor | MCC | - | - | - | - | 427K |
| 17. | 2N6519 | High Voltage Transistors | ON | - | 3 | - | - | 229K |
| 18. | 2N6519 | High voltage transistor. Collector-emitter voltage: Vceo = -300V. Collector-base voltage: Vcbo = -300V. Collector dissipation: Pc(max) = 0.625W. | USHA | - | 3 | 0°C | 150°C | 50K |
| 19. | 2N6519RLRA | High Voltage Transistors | ON | - | 3 | - | - | 229K |
| 20. | H2N6517 | 500mA NPN epitaxial planar transistor for general purpose applications requiring high breakdown voltages | HSMC | - | 3 | - | - | 41K |
