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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 1. | 2N4014 | HIGH VOLTAGE HIGH CURRENT SWITCH | STM | - | - | - | - | 78K |
| 2. | 2N4033 | PNP Transistor | MSEMI | TO-39 | - | - | - | 489K |
| 3. | 2N4033 | 80V Vce, 1A Ic, 150MHz PNP bipolar transistor | SAMEL | TO39 | - | - | - | 14K |
| 4. | 2N4033 | GENERAL PURPOSE AMPLIFIERS AND SWITCHES | STM | - | - | - | - | 62K |
| 5. | 2N4033CSM4 | 80V Vce, 1A Ic, 150MHz PNP bipolar transistor | SAMEL | LCC3 | - | - | - | 15K |
| 6. | 2N4036 | General purpose transistor | MOT | TO-39 | 3 | -65°C | 200°C | 86K |
| 7. | 2N4036 | General purpose transistor | MOT | TO-39 | 3 | -65°C | 200°C | 86K |
| 8. | 2N4036 | MEDIUM SPEED SWITCH | STM | - | - | - | - | 62K |
| 9. | 2N4037 | General purpose transistor | MOT | TO-39 | 3 | -65°C | 200°C | 86K |
| 10. | HGTH12N40E1 | 10A, 12A, 400V and 500V N-Channel IGBTs | INTRS | - | - | - | - | 38K |
| 11. | HGTP10N50E1HGTH12N40C1 | 10A, 12A, 400V and 500V N-Channel IGBTs | INTRS | - | - | - | - | 38K |
| 12. | MTB2N40E | TMOS E-FET high energy power FET | MOT | DPAK | 4 | -55°C | 150°C | 271K |
| 13. | MTD2N40E | TMOS E-FET high energy power FET D2PAK for surface mount | MOT | DPAK | 4 | -55°C | 150°C | 268K |
| 14. | MTP2N40E | TMOS E-FET power field effect transistor | MOT | - | 4 | -55°C | 150°C | 217K |
| 15. | R1112N40A-TL | Low noise 150mA LDO regulator. Output voltage 4.0V. Active low type. Taping type TL | RICOH | SOT-23 | 5 | -40°C | 85°C | 244K |
| 16. | R1112N40A-TR | Low noise 150mA LDO regulator. Output voltage 4.0V. Active low type. Standard taping type TR | RICOH | SOT-23 | 5 | -40°C | 85°C | 244K |
| 17. | R1112N40B-TL | Low noise 150mA LDO regulator. Output voltage 4.0V. Active high type. Taping type TL | RICOH | SOT-23 | 5 | -40°C | 85°C | 244K |
| 18. | R1112N40B-TR | Low noise 150mA LDO regulator. Output voltage 4.0V. Active high type. Standard taping type TR | RICOH | SOT-23 | 5 | -40°C | 85°C | 244K |
| 19. | RFH12N40 | 12.0A, 350V and 400V, 0.380 ohm, N-Channel Power MOSFET FN1630.2 | INTRS | - | - | - | - | 40K |
| 20. | RFM12N40 | 12.0A, 350V and 400V, 0.500 ohm, N-Channel Power MOSFET | INTRS | - | - | - | - | 31K |
