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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 1. | 2N3053 | General purpose transistor | BOCA | TO-39 | 3 | -65°C | 200°C | 42K |
| 2. | 2N3053 | Silicon planar epitaxial transistor | ME | TO-39 | 3 | -65°C | 200°C | 203K |
| 3. | 2N3053 | Silicon planar epitaxial transistor | ME | TO-92A | 3 | -65°C | 200°C | 203K |
| 4. | 2N3053 | 40V Vce, 0.7A Ic, 100MHz NPN bipolar transistor | SAMEL | TO39 | - | - | - | 17K |
| 5. | 2N3053A | General purpose transistor | BOCA | TO-39 | 3 | -65°C | 200°C | 42K |
| 6. | 2N3054A | 55V Vce, 4A Ic, 0.8MHz NPN bipolar transistor | SAMEL | TO66 | - | - | - | 15K |
| 7. | 2N3055 | Complementary silicon power transistor | BOCA | TO-3 | 2 | -65°C | 200°C | 174K |
| 8. | 2N3055 | Complementary silicon power transistor | MOSP | TO-3 | 2 | -65°C | 200°C | 167K |
| 9. | 2N3055 | Complementary silicon power transistor | MOT | TO-204AA | 2 | -65°C | 200°C | 130K |
| 10. | 2N3055 | COMPLEMENTARY SILICON POWER TRANSISTORS | STM | - | - | - | - | 47K |
| 11. | 2N3055 | NPN silicon power transistor. 15Amp, 60V, 115Watt. These devices are designed for general purpose switching and amplifier applications. | USHA | TO-204AA | 3 | -65°C | 200°C | 48K |
| 12. | 2N3055 | High power NPN transistor. General-purpose switching and amplifier application. Vceo = 60Vdc, Vcer = 70Vdc, Vcb = 100Vdc, Veb = 15Vdc, Ic = 7Adc, Ib = 7Adc, PD = 115W. | USHA | TO-3 | 3 | -65°C | 200°C | 48K |
| 13. | 2N3055A | 60V Complementary silicon power transistor | BOCA | TO-3 | 2 | -65°C | 200°C | 200K |
| 14. | 2N3055A | Complementary silicon high-power transistor | MOSP | TO-3 | 2 | -65°C | 200°C | 193K |
| 15. | 2N3055A | Complementary silicon high power transistor | MOT | TO-204AA | 2 | -65°C | 200°C | 235K |
| 16. | 2N3055H | NPN silicon power transistor. 15Amp, 100V, 115Watt. These devices are designed for general purpose switching and amplifier applications. | USHA | TO-204AA | 3 | -65°C | 200°C | 48K |
| 17. | 2N3057 | Silicon planar epitaxial transistor | ME | TO-39 | 3 | -65°C | 200°C | 203K |
| 18. | 2N3057 | Silicon planar epitaxial transistor | ME | TO-92A | 3 | -65°C | 200°C | 203K |
| 19. | 2N3057 | Chip: geometry 4500; polarity PNP | SECOA | - | - | - | - | 31K |
| 20. | 2N3057A | Chip: geometry 4500; polarity PNP | SECOA | - | - | - | - | 31K |
