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2711 datasheet



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Found: 25      Displaying: 1 - 20
#
Part:
Description:
Manuf.
Package
Pins
T°min
T°max
PDF size
1.
2N2711NPN silicon planar epitaxial transistor
ME
TO-92B
3
-
-
57K
2.
KA22711BMonolithic integrated circuit for Dolby B-type NR processor
SMSNG
DIP
16
-30°C
85°C
263K
3.
KA22711BDMonolithic integrated circuit for Dolby B-type NR processor
SMSNG
SOP
16
-30°C
85°C
263K
4.
L27116 Watt, silicon gate enhancement mode RF power LDMOS transistor
POFET
SO
2
-65°C
150°C
40K
5.
LM2711MT-ADJTFT Panel Module
NSC
TSSOP
20
-40°C
125°C
846K
6.
LM2711MT-ADJTFT Panel Module
NSC
TSSOP
20
-40°C
125°C
846K
7.
MPS2711NPN silicon planar epitaxial transistor
ME
TO-92A
3
-
-
57K
8.
PS2711-1-F3Photocoupler with high isolation voltage
NEC
4-P-SOP Embossed Tap
-
-
-
92K
9.
PS2711-1-F4Photocoupler with high isolation voltage
NEC
4-P-SOP Embossed Tap
-
-
-
92K
10.
TLV2711CDBV SINGLE LINCMOS(TM) RAIL-TO-RAIL UPOWER OPERATIONAL AMPLIFIER
TI
DBV
5
-
-
551K
11.
TLV2711CDBVR SINGLE LINCMOS(TM) RAIL-TO-RAIL UPOWER OPERATIONAL AMPLIFIER
TI
DBV
5
0°C
70°C
551K
12.
TLV2711CDBVT SINGLE LINCMOS(TM) RAIL-TO-RAIL UPOWER OPERATIONAL AMPLIFIER
TI
DBV
5
-
-
551K
13.
TLV2711IDBV SINGLE LINCMOS(TM) RAIL-TO-RAIL UPOWER OPERATIONAL AMPLIFIER
TI
DBV
5
-
-
551K
14.
TLV2711IDBVR SINGLE LINCMOS(TM) RAIL-TO-RAIL UPOWER OPERATIONAL AMPLIFIER
TI
DBV
5
-40°C
85°C
551K
15.
TLV2711IDBVT SINGLE LINCMOS(TM) RAIL-TO-RAIL UPOWER OPERATIONAL AMPLIFIER
TI
DBV
5
-
-
551K
16.
TLV2711IDBVT SINGLE LINCMOS(TM) RAIL-TO-RAIL UPOWER OPERATIONAL AMPLIFIER
TI
DBV
5
-
-
551K
17.
UPC2711TSuper small-size low-current high-freq. wide-band amp.
NEC
6-pin mini-mold
-
-
-
185K
18.
UPC2711T-E3Super small-size low-current high-freq. wide-band amp.
NEC
6-pin mini-mold embo
-
-
-
185K
19.
UPC2711TBSuper small-size low-current high-freq. wide-band amp.
NEC
6-pin super mini mol
-
-
-
185K
20.
UPC2711TB-E3Super small-size low-current high-freq. wide-band amp.
NEC
6-pin super mini mol
-
-
-
185K
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