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24S4 datasheet
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We have more Special DataSheet than other site. If, There is not a datasheet which searches, Request ! (It will updated in 12 hours.)
ChipManuals is a free electronic engineering tool that enables you to locate product datasheets from hundreds of electronic component manufacturers worldwide.
Found: 14 Displaying: 1 - 14| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size | | 1. | 24S470 | Bobbin wound surface mount inductor (EMI shielded type). Nominal inductance (1kHz, 100mV) 47uH | CANDD | - | - | -40°C | 85°C | 100K | | 2. | 24S4R7 | Bobbin wound surface mount inductor (EMI shielded type). Nominal inductance (1kHz, 100mV) 4.7uH | CANDD | - | - | -40°C | 85°C | 100K | | 3. | IDT70824S45G | High-speed 4K x 16 sequential access random access memory | IDT | PGA | 84 | 0°C | 70°C | 317K | | 4. | IDT70824S45GB | High-speed 4K x 16 sequential access random access memory | IDT | PGA | 84 | -55°C | 125°C | 317K | | 5. | IDT70824S45PF | High-speed 4K x 16 sequential access random access memory | IDT | TQFP | 80 | 0°C | 70°C | 317K | | 6. | IDT70824S45PFB | High-speed 4K x 16 sequential access random access memory | IDT | TQFP | 80 | -55°C | 125°C | 317K | | 7. | S-24S45I10 | Serial non-volatile RAM | SII | DIP | 8 | -40°C | 85°C | 857K | | 8. | S-24S45IF10 | Serial non-volatile RAM | SII | SOP | 8 | -40°C | 85°C | 857K | | 9. | SMS24S4R1R1R0R0 | Highly programmable voltage supervisory circuit | SUMIT | SOIC | 8 | -40°C | 85°C | 446K | | 10. | TBP24S41J | Standard and low power programmable read-only memory, 1024 x 4 bit, 20ns | TI | CERDIP | 18 | 0°C | 70°C | 1M | | 11. | TBP24S41J | Standard and low power programmable read-only memory, 1024 x 4 bit, 20ns | TI | CERDIP | 18 | 0°C | 70°C | 1M | | 12. | TBP24S41MJ | Standard and low power programmable read-only memory, 1024 x 4 bit, 20ns | TI | CERDIP | 18 | 0°C | 70°C | 1M | | 13. | TBP24S41MJ | Standard and low power programmable read-only memory, 1024 x 4 bit, 20ns | TI | CERDIP | 18 | 0°C | 70°C | 1M | | 14. | TBP24S41N | Standard and low power programmable read-only memory, 1024 x 4 bit, 20ns | TI | PDIP | 18 | 0°C | 70°C | 1M |
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