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20N60 datasheet



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Found: 52      Displaying: 1 - 20
#
Part:
Description:
Manuf.
Package
Pins
T°min
T°max
PDF size
1.
HGT1S20N60B3S40A, 600V, UFS Series N-Channel IGBTs
INTRS
-
-
-
-
138K
2.
HGT1S20N60C3S45A, 600V, UFS Series N-Channel IGBT
INTRS
-
-
-
-
81K
3.
HGTG20N60A4600V, SMPS Series N-Channel IGBTs
INTRS
-
-
-
-
354K
4.
HGTG20N60A4D600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
INTRS
-
-
-
-
351K
5.
HGTG20N60B340A, 600V, UFS Series N-Channel IGBTs
INTRS
-
-
-
-
138K
6.
HGTG20N60B3D40A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
INTRS
-
-
-
-
135K
7.
HGTG20N60C3D45A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
INTRS
-
-
-
-
82K
8.
HGTP20N60A4600V, SMPS Series N-Channel IGBTs
INTRS
-
-
-
-
354K
9.
HGTP20N60A4600V, SMPS Series N-Channel IGBTs
INTRS
-
-
-
-
354K
10.
HGTP20N60B340A, 600V, UFS Series N-Channel IGBTs
INTRS
-
-
-
-
138K
11.
HGTP20N60C345A, 600V, UFS Series N-Channel IGBT
INTRS
-
-
-
-
81K
12.
IXFH20N60600V HiPerFET power MOSFET
IXYS
TO-247
3
-55°C
150°C
82K
13.
IXFM20N60600V HiPerFET power MOSFET
IXYS
TO-204
4
-55°C
150°C
82K
14.
IXTH20N60600V HiPerFET power MOSFET
IXYS
TO-247
3
-55°C
150°C
105K
15.
MGP20N60UInsulated gate bipolar transistor
MOT
-
3
-55°C
150°C
120K
16.
MGP20N60UInsulated Gate Bipolar Transistor N-Channel
ON
TO-220
3
-
-
120K
17.
MGW20N60DInsulated gate bipolar transistor
MOT
TO-247AE
3
-55°C
150°C
246K
18.
R1120N601A-TLLow noise 150mA LDO regulator. Output voltage 6.0V. L active type. Taping specification TL.
RICOH
SOT-23
5
-40°C
85°C
187K
19.
R1120N601B-TLLow noise 150mA LDO regulator. Output voltage 6.0V. H active type. Taping specification TL.
RICOH
SOT-23
5
-40°C
85°C
187K
20.
R1120N601B-TRLow noise 150mA LDO regulator. Output voltage 6.0V. "H" active type. Standard taping specification TR.
RICOH
SOT-23
5
-40°C
85°C
187K
1 2 3


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