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Searchign results: 1N5407
| 1N5407 datasheet
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We have more Special DataSheet than other site. If, There is not a datasheet which searches, Request ! (It will updated in 12 hours.)
ChipManuals is a free electronic engineering tool that enables you to locate product datasheets from hundreds of electronic component manufacturers worldwide.
Found: 43 Displaying: 1 - 20| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size | | 1. | 1N5407 | 3 AMP plastic silicon rectifier | CALLM | DO-201AD5 | 2 | -65°C | 175°C | 677K | | 2. | 1N5407 | Silicon rectifier | DCCOM | DO-27 | 2 | -65°C | 175°C | 412K | | 3. | 1N5407 | Silicon rectifier | DIO | - | 2 | -50°C | 175°C | 42K | | 4. | 1N5407 | 3.0 Ampere General Purpose Rectifiers | FAIR | - | - | - | - | 38K | | 5. | 1N5407 | 800 V, 3 A, General purpose plastic rectifier | GODAR | DO | 2 | -50°C | 170°C | 198K | | 6. | 1N5407 | Axial-lead standard recovery rectifier | MOT | Issue C | 2 | -65°C | 170°C | 44K | | 7. | 1N5407 | Silicon rectifier. VRRM = 800V. VRMS = 560V. VDC = 800V. Current 3.0A | RECTR | - | 2 | -65°C | 175°C | 23K | | 8. | 1N5407 | Silicon rectifier. Max recurrent peak reverse voltage 800V. Max RMS voltage 560V. Max DC blocking voltage 800V. Current 3.0A | WINGS | DO-27 | 2 | -65°C | 175°C | 278K | | 9. | 1N5407 | 800V, 3.0A silicon rectifier | WTE | - | 2 | -65°C | 125°C | 39K | | 10. | 1N5407 | 800V, 3.0A silicon rectifier | WTE | - | 2 | -65°C | 125°C | 39K | | 11. | 1N5407 | 800 V, 3.0 A silicon rectifier | ZOWIE | - | 2 | -65°C | 175°C | 47K | | 12. | 1N5407 | 800 V, 3.0 A silicon rectifier | ZOWIE | - | 2 | -65°C | 175°C | 47K | | 13. | 1N5407-T3 | 800V, 3.0A silicon rectifier | WTE | - | 2 | -65°C | 125°C | 39K | | 14. | 1N5407-T3 | 800V, 3.0A silicon rectifier | WTE | - | 2 | -65°C | 125°C | 39K | | 15. | 1N5407-TB | 800V, 3.0A silicon rectifier | WTE | - | 2 | -65°C | 125°C | 39K | | 16. | 1N5407-TB | 800V, 3.0A silicon rectifier | WTE | - | 2 | -65°C | 125°C | 39K | | 17. | 1N5407G | Glass passivated rectifier | DCCOM | DO-27 | 2 | -65°C | 175°C | 411K | | 18. | 1N5407G | 800 V, 3.0 A silicon rectifier | EIC | - | 2 | -65°C | 175°C | 16K | | 19. | 1N5407G | 800 V, 3 A, Glass passivated junction rectifier | GODAR | DO | 2 | -65°C | 175°C | 220K | | 20. | 1N5407K | Silicon rectifier | DIO | - | 2 | -50°C | 175°C | 39K |
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