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12n1 datasheet
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ChipManuals is a free electronic engineering tool that enables you to locate product datasheets from hundreds of electronic component manufacturers worldwide.
Found: 110 Displaying: 1 - 20| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size | | 1. | BTS612N1 | Smart 2-channel highside power switch | SMNS | TO-220AB/7 | 7 | -40°C | 150°C | 183K | | 2. | BTS712N1 | Smart 4-channel highside power switch | SMNS | P-DSO-20-9 | 20 | -40°C | 150°C | 183K | | 3. | FM27C512N120 | 512K-Bit (64K x 8) High Performance CMOS EPROM | FAIR | MDIP | 28 | - | - | 100K | | 4. | FM27C512N150 | 512K-Bit (64K x 8) High Performance CMOS EPROM | FAIR | MDIP | 28 | - | - | 100K | | 5. | MGV12N120D | Insulated gate bipolar transistor | MOT | TO-268AA | 3 | -55°C | 150°C | 79K | | 6. | MGW12N120 | Insulated gate bipolar transistor | MOT | TO-247AE | 3 | -55°C | 150°C | 228K | | 7. | MGW12N120 | Insulated Gate Bipolar Transistor N-Channel | ON | TO-247 | 3 | - | - | 136K | | 8. | MGW12N120D | Insulated gate bipolar transistor with anti-parallel diode | MOT | TO-247AE | 3 | -55°C | 150°C | 250K | | 9. | MGW12N120D | Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel | ON | TO-247 | 3 | - | - | 168K | | 10. | MTP12N10E | TMOS E-FET power field effect transistor | MOT | - | 4 | -55°C | 170°C | 239K | | 11. | NM27C512N120 | 524,288-Bit (64K x 8) High Performance CMOS EPROM | FAIR | MDIP | 28 | - | - | 105K | | 12. | NM27C512N150 | 524,288-Bit (64K x 8) High Performance CMOS EPROM | FAIR | MDIP | 28 | - | - | 105K | | 13. | PHD12N10E | PowerMOS transistor | PHLPS | SOT428 | - | - | - | 79K | | 14. | PHP12N10E | PowerMOS transistor | PHLPS | SOT78 | - | - | - | 72K | | 15. | RFM12N10 | 12.0A, 80V and 100V, 0.200 ohm, N-Channel Power MOSFET FN1386.2 | INTRS | - | - | - | - | 43K | | 16. | RFM12N18 | 12.0A, 180V and 200V, 0.250 ohm, N-Channel Power MOSFET | INTRS | - | - | - | - | 35K | | 17. | RFP12N10 | 12.0A, 80V and 100V, 0.200 ohm, N-Channel Power MOSFET FN1386.2 | INTRS | - | - | - | - | 43K | | 18. | RFP12N10L | 12A, 100V, 0.200 Ohm, Logic Level, N-Channel Power MOSFET | INTRS | - | - | - | - | 38K | | 19. | RFP12N18 | 12.0A, 180V and 200V, 0.250 ohm, N-Channel Power MOSFET | INTRS | - | - | - | - | 35K | | 20. | STD12N10L | N-CHANNEL 100V - 0.12 OHM - 12A TO-252 LOW THRESHOLD POWER MOS TRANSISTOR | STM | - | - | - | - | 45K |
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