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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 1. | HGTP10N40E1 | 10A, 12A, 400V and 500V N-Channel IGBTs | INTRS | - | - | - | - | 38K |
| 2. | HGTP10N40E1 | 10A, 12A, 400V and 500V N-Channel IGBTs | INTRS | - | - | - | - | 38K |
| 3. | HGTP10N40E1D | 10A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes | INTRS | - | - | - | - | 37K |
| 4. | MTB10N40E | TMOS E-FET high energy power FET | MOT | DPAK | 4 | -55°C | 150°C | 273K |
| 5. | MTP10N40E | TMOS E-FET high energy power FET | MOT | - | 4 | -65°C | 150°C | 249K |
| 6. | MTP10N40E | TMOS E-FET high energy power FET | MOT | - | 4 | -65°C | 150°C | 249K |
| 7. | PHB10N40E | 400 V, power MOS transistor avalanche energy rated | PHLPS | SOT | 3 | -55°C | 150°C | 90K |
| 8. | PHP10N40E | 400 V, power MOS transistor avalanche energy rated | PHLPS | SOT | 3 | -55°C | 150°C | 90K |
| 9. | PHP10N40E | PowerMOS transistor. Avalanche energy rated. | PHLPS | SOT78 | 3 | -55°C | 150°C | 90K |
| 10. | PHP10N40E | PowerMOS transistor. Avalanche energy rated. | PHLPS | SOT78 | 3 | -55°C | 150°C | 90K |
| 11. | PHP10N40E | PowerMOS transistor. Avalanche energy rated. | PHLPS | TO220AB | 3 | -55°C | 150°C | 90K |
| 12. | PHP10N40E | PowerMOS transistor. Avalanche energy rated. | PHLPS | TO220AB | 3 | -55°C | 150°C | 90K |
| 13. | PHP10N40E | PowerMOS transistor. Avalanche energy rated. | PHLPS | SOT78 | 3 | -55°C | 150°C | 90K |
| 14. | PHW10N40E | 400 V, power MOS transistor avalanche energy rated | PHLPS | SOT | 3 | -55°C | 150°C | 90K |
| 15. | PHX10N40E | 400 V, power MOS transistor avalanche energy rated | PHLPS | SOT | 3 | -55°C | 150°C | 74K |
| 16. | PHX10N40E | PowerMOS transistor. Avalanche energy rated. | PHLPS | SOT186A | 3 | -55°C | 150°C | 75K |
