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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 281. | F1001 | Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor | POFET | - | 4 | -65°C | 150°C | 37K |
| 282. | F1001C | Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor | POFET | - | 6 | -65°C | 150°C | 33K |
| 283. | F1002 | Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor | POFET | - | 4 | -65°C | 150°C | 37K |
| 284. | F1003 | Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor | POFET | - | 4 | -65°C | 150°C | 37K |
| 285. | F1004 | Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor | POFET | - | 6 | -65°C | 150°C | 37K |
| 286. | F1005 | Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor | POFET | - | 4 | -65°C | 150°C | 37K |
| 287. | F1006 | Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor | POFET | - | 4 | -65°C | 150°C | 37K |
| 288. | F1007 | Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor | POFET | - | 4 | -65°C | 150°C | 38K |
| 289. | F1008 | Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor | POFET | - | 4 | -65°C | 150°C | 38K |
| 290. | MRF10005 | 5 W, microwave power transistor NPN silicon | MACOM | - | 3 | - | - | 160K |
| 291. | MRF1000MB | 0.7 W, microwave power transistor NPN silicon | MACOM | - | 4 | - | - | 104K |
| 292. | MRF10031MB | 30 W, microwave power transistor NPN silicon | MACOM | - | 3 | - | - | 163K |
| 293. | MX29F100TMC-12 | Access time: 120ns; 1M-bit (128K x 8/64K x 16) CMOS flash memory | MCNIX | SOP | 44 | 0°C | 70°C | 706K |
| 294. | MX29F100TMC-90 | Access time: 90ns; 1M-bit (128K x 8/64K x 16) CMOS flash memory | MCNIX | SOP | 44 | 0°C | 70°C | 706K |
| 295. | MX29F100TTA-12 | Access time: 120ns; 1M-bit (128K x 8/64K x 16) CMOS flash memory | MCNIX | TSOP | 48 | -40°C | 125°C | 706K |
| 296. | MX29F100TTA-90 | Access time: 90ns; 1M-bit (128K x 8/64K x 16) CMOS flash memory | MCNIX | TSOP | 48 | -40°C | 125°C | 706K |
| 297. | MX29F100TTC-12 | Access time: 120ns; 1M-bit (128K x 8/64K x 16) CMOS flash memory | MCNIX | TSOP | 48 | 0°C | 70°C | 706K |
| 298. | MX29F100TTC-55 | Access time: 55ns; 1M-bit (128K x 8/64K x 16) CMOS flash memory | MCNIX | TSOP | 48 | 0°C | 70°C | 706K |
| 299. | MX29F100TTC-70 | Access time: 70ns; 1M-bit (128K x 8/64K x 16) CMOS flash memory | MCNIX | TSOP | 48 | 0°C | 70°C | 706K |
| 300. | MX29F100TTC-90 | Access time: 90ns; 1M-bit (128K x 8/64K x 16) CMOS flash memory | MCNIX | TSOP | 48 | 0°C | 70°C | 706K |
