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Found: 123      Displaying: 21 - 40
#
Part:
Description:
Manuf.
Package
Pins
T°min
T°max
PDF size
21.
MGSF1N03LT1Low rDS(on) small-signal MOSFET tmos single N-channel field effect transistor
MOT
SOT-23
3
-55°C
150°C
125K
22.
MGSF1N03LT1Small-signal MOSFETs TMOS single N-channel field effect transistor
MOT
TO-236AB
3
-55°C
150°C
183K
23.
MGSF1N03LT3Low rDS(on) small-signal MOSFET tmos single N-channel field effect transistor
MOT
SOT-23
3
-55°C
150°C
125K
24.
PHB11N03LT30 V, N-channel trenchMOS transistor logic level FET
PHLPS
SOT
3
-55°C
175°C
107K
25.
PHD11N03LT30 V, N-channel trenchMOS transistor logic level FET
PHLPS
SOT
3
-55°C
175°C
107K
26.
PHD83N03LT25 V, N-channel enhancement mode field-effect transistor
PHLPS
SOT
3
-55°C
175°C
282K
27.
PHD83N03LT25 V, N-channel enhancement mode field-effect transistor
PHLPS
SOT
3
-55°C
175°C
282K
28.
PHD95N03LT25 V, N-channel enhancement mode field-effect transistor
PHLPS
SOT
3
-55°C
175°C
282K
29.
PHP45N03LTA25 V, N-channel enhancement mode field-effect transistor
PHLPS
SOT
3
-55°C
175°C
298K
30.
RF1S42N03LSM42A, 30V, 0.025 Ohm, Logic Level, N-Channel Power MOSFET
INTRS
-
-
-
-
112K
31.
RF1S42N03LSM42A, 30V, 0.025 Ohm, Logic Level, N-Channel Power MOSFET
INTRS
-
-
-
-
112K
32.
RF1S45N03L45A, 30V, 0.022 ohm, Logic Level, N-Channel Power MOSFET
INTRS
-
-
-
-
100K
33.
RFD16N03L16A, 30V, 0.022 Ohm, Logic Level, N-Channel Power MOSFETs
INTRS
-
-
-
-
107K
34.
RFD16N03LSMPower dissipation 90 W Transistor polarity N Channel Current Id cont. 16 A Current Idm pulse 80 A Voltage Vgs th max. 2 V Voltage Vds max 30 V Resistance Rds on 0.022 R Temperature current 25 ?C
FAIR
TO-252
-
-
-
130K
35.
RFD16N03LSM16A, 30V, 0.022 Ohm, Logic Level, N-Channel Power MOSFETs
INTRS
-
-
-
-
107K
36.
RFP42N03L42A, 30V, 0.025 Ohm, Logic Level, N-Channel Power MOSFET
INTRS
-
-
-
-
112K
37.
RFP45N03L45A, 30V, 0.022 ohm, Logic Level, N-Channel Power MOSFET
INTRS
-
-
-
-
100K
38.
STB60N03L-10N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
STM
-
-
-
-
87K
39.
STD20N03LPower dissipation 80 W Transistor polarity N Channel Current Id cont. 20 A Current Idm pulse 80 A Voltage Vgs th max. 2.5 V Voltage Vds max 30 V Resistance Rds on 0.022 R Temperature current 25 ?C
STM
TO-252
-
-
-
105K
40.
STP40N03L-20N-CHANNLE ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR
STM
-
-
-
-
65K
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