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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 221. | AS29F200B-55SC | 5V 256K x 8 or 128 x 16 CMOS flash EEPROM, access time 55ns | ALSC | SO | 44 | 0°C | 70°C | 375K |
| 222. | AS29F200B-55SI | 5V 256K x 8 or 128 x 16 CMOS flash EEPROM, access time 55ns | ALSC | SO | 44 | -40°C | 85°C | 375K |
| 223. | AS29F200B-55TI | 5V 256K x 8 or 128 x 16 CMOS flash EEPROM, access time 55ns | ALSC | TSOP | 48 | -40°C | 85°C | 375K |
| 224. | EN29F002B-55J | 2 Megabit (256K x 8-bit) flach memory. Speed 55ns. 5.0V +-10% for both read/write operation. With RESET function. | EON | PLCC | 32 | 0°C | 70°C | 267K |
| 225. | EN29F002B-55JI | 2 Megabit (256K x 8-bit) flach memory. Speed 55ns. 5.0V +-10% for both read/write operation. With RESET function. | EON | PLCC | 32 | -40°C | 85°C | 267K |
| 226. | EN29F002B-55P | 2 Megabit (256K x 8-bit) flach memory. Speed 55ns. 5.0V +-10% for both read/write operation. With RESET function. | EON | PDIP | 32 | 0°C | 70°C | 267K |
| 227. | EN29F002B-55PI | 2 Megabit (256K x 8-bit) flach memory. Speed 55ns. 5.0V +-10% for both read/write operation. With RESET function. | EON | PDIP | 32 | -40°C | 85°C | 267K |
| 228. | EN29F002B-55T | 2 Megabit (256K x 8-bit) flach memory. Speed 55ns. 5.0V +-10% for both read/write operation. With RESET function. | EON | TSOP | 32 | 0°C | 70°C | 267K |
| 229. | EN29F002B-55TI | 2 Megabit (256K x 8-bit) flach memory. Speed 55ns. 5.0V +-10% for both read/write operation. With RESET function. | EON | TSOP | 32 | -40°C | 85°C | 267K |
| 230. | EN29F002NB-55J | 2 Megabit (256K x 8-bit) flach memory. Speed 55ns. 5.0V +-10% for both read/write operation. Without RESET function. | EON | PLCC | 32 | 0°C | 70°C | 267K |
| 231. | EN29F002NB-55JI | 2 Megabit (256K x 8-bit) flach memory. Speed 55ns. 5.0V +-10% for both read/write operation. Without RESET function. | EON | PLCC | 32 | -40°C | 85°C | 267K |
| 232. | EN29F002NB-55P | 2 Megabit (256K x 8-bit) flach memory. Speed 55ns. 5.0V +-10% for both read/write operation. Without RESET function. | EON | PDIP | 32 | 0°C | 70°C | 267K |
| 233. | EN29F002NB-55PI | 2 Megabit (256K x 8-bit) flach memory. Speed 55ns. 5.0V +-10% for both read/write operation. Without RESET function. | EON | PDIP | 32 | -40°C | 85°C | 267K |
| 234. | EN29F002NB-55T | 2 Megabit (256K x 8-bit) flach memory. Speed 55ns. 5.0V +-10% for both read/write operation. Without RESET function. | EON | TSOP | 32 | 0°C | 70°C | 267K |
| 235. | EN29F002NB-55TI | 2 Megabit (256K x 8-bit) flach memory. Speed 55ns. 5.0V +-10% for both read/write operation. Without RESET function. | EON | TSOP | 32 | -40°C | 85°C | 267K |
| 236. | EN29F800B-55T | 8 Megabit (1024K x 8-bit/512K x 16-bit) flach memory. Boot sector flash memory, CMOS 5.0 volt only. Speed 55ns. Bottom sector. | EON | TSOP | 48 | 0°C | 70°C | 221K |
| 237. | EN29F800B-55TI | 8 Megabit (1024K x 8-bit/512K x 16-bit) flach memory. Boot sector flash memory, CMOS 5.0 volt only. Speed 55ns. Bottom sector. | EON | TSOP | 48 | -40°C | 85°C | 221K |
| 238. | V29C51002B-55J | 2megabit (262,144 x 8bit) 5V CMOS flash memory | MOSEL | PLCC | 32 | 0°C | 70°C | 74K |
| 239. | V29C51002B-55P | 2megabit (262,144 x 8bit) 5V CMOS flash memory | MOSEL | PDIP | 32 | 0°C | 70°C | 74K |
| 240. | V29C51002B-55T | 2megabit (262,144 x 8bit) 5V CMOS flash memory | MOSEL | TSOP | 32 | 0°C | 70°C | 74K |
