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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 61. | 5962-9658401QEA | RadHard MSI: SMD. 4-bit binary full adder. Class Q, QML. Lead finish solder. Total dose none. | UTMC | Ceramic DIP | 16 | -55°C | 125°C | 10M |
| 62. | 5962-9658401QEC | RadHard MSI: SMD. 4-bit binary full adder. Class Q, QML. Lead finish gold. Total dose none. | UTMC | Ceramic DIP | 16 | -55°C | 125°C | 10M |
| 63. | 5962-9658401VEA | RadHard MSI: SMD. 4-bit binary full adder. Class V, QML. Lead finish solder. Total dose none. | UTMC | Ceramic DIP | 16 | -55°C | 125°C | 10M |
| 64. | 5962-9658401VEC | RadHard MSI: SMD. 4-bit binary full adder. Class V, QML. Lead finish gold. Total dose none. | UTMC | Ceramic DIP | 16 | -55°C | 125°C | 10M |
| 65. | 5962-9658401VEX | RadHard MSI: SMD. 4-bit binary full adder. Class V, QML. Lead finish optional. Total dose none. | UTMC | Ceramic DIP | 16 | -55°C | 125°C | 10M |
| 66. | 5962-9658401VXA | RadHard MSI: SMD. 4-bit binary full adder. Class V, QML. Lead finish solder. Total dose none. | UTMC | Ceramic flatpack | 16 | -55°C | 125°C | 10M |
| 67. | 5962-9658401VXC | RadHard MSI: SMD. 4-bit binary full adder. Class V, QML. Lead finish gold. Total dose none. | UTMC | Ceramic flatpack | 16 | -55°C | 125°C | 10M |
| 68. | 5962-9658401VXX | RadHard MSI: SMD. 4-bit binary full adder. Class V, QML. Lead finish optional. Total dose none. | UTMC | Ceramic flatpack | 16 | -55°C | 125°C | 10M |
| 69. | 5962-9658401VXX | RadHard MSI: SMD. 4-bit binary full adder. Class V, QML. Lead finish optional. Total dose none. | UTMC | Ceramic flatpack | 16 | -55°C | 125°C | 10M |
| 70. | AD8401AR | 8V; 8-bit, 4-channel data acquisition system. For servo controls, digitally controlled calibration, process control equipment | AD | SOIC | 28 | -40°C | 85°C | 179K |
| 71. | AD8401CHIPS | 8V; 8-bit, 4-channel data acquisition system. For servo controls, digitally controlled calibration, process control equipment | AD | Die | - | - | - | 179K |
| 72. | GS84018AB-100 | 100MHz 12ns 256K x 18 4Mb sync burst SRAM | GSITE | BGA | 119 | 0°C | 70°C | 911K |
| 73. | GS84018AB-100I | 100MHz 12ns 256K x 18 4Mb sync burst SRAM | GSITE | BGA | 119 | -40°C | 85°C | 911K |
| 74. | GS84018AB-100I | 100MHz 12ns 256K x 18 4Mb sync burst SRAM | GSITE | BGA | 119 | -40°C | 85°C | 911K |
| 75. | GS84018AB-150 | 150MHz 10ns 256K x 18 4Mb sync burst SRAM | GSITE | BGA | 119 | 0°C | 70°C | 911K |
| 76. | GS84018AB-150I | 150MHz 10ns 256K x 18 4Mb sync burst SRAM | GSITE | BGA | 119 | -40°C | 85°C | 911K |
| 77. | GS84018AB-166I | 166MHz 8.5ns 256K x 18 4Mb sync burst SRAM | GSITE | BGA | 119 | -40°C | 85°C | 911K |
| 78. | GS84018AB-180I | 180MHz 8ns 256K x 18 4Mb sync burst SRAM | GSITE | BGA | 119 | -40°C | 85°C | 911K |
| 79. | SDM8401 | 30V; 6A; 2.0W; dual enchanced mode field effect transistor (N and P - channel) | SM | Surface mount | 8 | -55°C | 150°C | 1M |
| 80. | SP8401 | 6.5V; 20mA; very low phase noise 300MHz+10/11. For ultra wideband log receivers, channelised receivers, monopulse applications | MITEL | DIP | 28 | - | - | 98K |
