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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 301. | 28C64AJM-1 | High speed 120 ns CMOS 64 K electrically erasable programmable ROM 8K x 8 BIT EEPROM | TRBIC | PLCC | 32 | -55°C | 125°C | 42K |
| 302. | 28C64AJM-2 | High speed 150 ns CMOS 64 K electrically erasable programmable ROM 8K x 8 BIT EEPROM | TRBIC | PLCC | 32 | -55°C | 125°C | 42K |
| 303. | 28C64AJM-4 | High speed 250 ns CMOS 64 K electrically erasable programmable ROM 8K x 8 BIT EEPROM | TRBIC | PLCC | 32 | -55°C | 125°C | 42K |
| 304. | 28C64API-1 | High speed 120 ns CMOS 64 K electrically erasable programmable ROM 8K x 8 BIT EEPROM | TRBIC | PDIP | 28 | -40°C | 85°C | 42K |
| 305. | 28C64APM-1 | High speed 120 ns CMOS 64 K electrically erasable programmable ROM 8K x 8 BIT EEPROM | TRBIC | PDIP | 28 | -55°C | 125°C | 42K |
| 306. | 28C64APM-2 | High speed 150 ns CMOS 64 K electrically erasable programmable ROM 8K x 8 BIT EEPROM | TRBIC | PDIP | 28 | -55°C | 125°C | 42K |
| 307. | 28C64APM-3 | High speed 200 ns CMOS 64 K electrically erasable programmable ROM 8K x 8 BIT EEPROM | TRBIC | PDIP | 28 | -55°C | 125°C | 42K |
| 308. | 28C64APM-4 | High speed 250 ns CMOS 64 K electrically erasable programmable ROM 8K x 8 BIT EEPROM | TRBIC | PDIP | 28 | -55°C | 125°C | 42K |
| 309. | 28C64ASM-1 | High speed 120 ns CMOS 64 K electrically erasable programmable ROM 8K x 8 BIT EEPROM | TRBIC | SOIC | 28 | -55°C | 125°C | 42K |
| 310. | 28C64ASM-2 | High speed 150 ns CMOS 64 K electrically erasable programmable ROM 8K x 8 BIT EEPROM | TRBIC | SOIC | 28 | -55°C | 125°C | 42K |
| 311. | 28C64ASM-3 | High speed 200 ns CMOS 64 K electrically erasable programmable ROM 8K x 8 BIT EEPROM | TRBIC | SOIC | 28 | -55°C | 125°C | 42K |
| 312. | 28C64ASM-4 | High speed 250 ns CMOS 64 K electrically erasable programmable ROM 8K x 8 BIT EEPROM | TRBIC | SOIC | 28 | -55°C | 125°C | 42K |
| 313. | 28C64ATM-1 | High speed 120 ns CMOS 64 K electrically erasable programmable ROM 8K x 8 BIT EEPROM | TRBIC | TSOP | 28 | -55°C | 125°C | 42K |
| 314. | 28C64ATM-2 | High speed 150 ns CMOS 64 K electrically erasable programmable ROM 8K x 8 BIT EEPROM | TRBIC | TSOP | 28 | -55°C | 125°C | 42K |
| 315. | 28C64ATM-3 | High speed 200 ns CMOS 64 K electrically erasable programmable ROM 8K x 8 BIT EEPROM | TRBIC | TSOP | 28 | -55°C | 125°C | 42K |
| 316. | 28C64ATM-4 | High speed 250 ns CMOS 64 K electrically erasable programmable ROM 8K x 8 BIT EEPROM | TRBIC | TSOP | 28 | -55°C | 125°C | 42K |
| 317. | CAT28C64BNA-12T | 64K CMOS parallel EEPROM 120ns | CTLST | PLCC | 32 | -40°C | 105°C | 57K |
| 318. | CAT28C64BNA-15T | 64K CMOS parallel EEPROM 150ns | CTLST | PLCC | 32 | -40°C | 105°C | 57K |
| 319. | UT61128C64Q-5 | Access time: 5 ns, 128 K x 64 Bit synchronous pipelined burst CMOS SRAM | UTRON | PQFP | 128 | 0°C | 70°C | 257K |
| 320. | UT61128C64T-5 | Access time: 5 ns, 128 K x 64 Bit synchronous pipelined burst CMOS SRAM | UTRON | TQFP | 128 | 0°C | 70°C | 257K |
