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ChipManuals is a free electronic engineering tool that enables you to locate product datasheets from hundreds of electronic component manufacturers worldwide.
Found: 233 Displaying: 201 - 220| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size | | 201. | BCC200PS03 | AC/DC industrial type. Output power 165 W. Output voltage 3.3 V. Output current 50.0 A. Output load regulation 1.5%. | IPSI | - | - | -20°C | 70°C | 485K | | 202. | BCC200PS03L | AC/DC industrial type. Output power 165 W. Output voltage 3.3 V. Output current 50.0 A. Output load regulation 1.5%. | IPSI | - | - | -40°C | 70°C | 485K | | 203. | BCC200PS05 | AC/DC industrial type. Output power 200 W. Output voltage 5.0 V. Output current 40.0 A. Output load regulation 1.5%. | IPSI | - | - | -20°C | 70°C | 485K | | 204. | BCC200PS05L | AC/DC industrial type. Output power 200 W. Output voltage 5.0 V. Output current 40.0 A. Output load regulation 1.5%. | IPSI | - | - | -40°C | 70°C | 485K | | 205. | IC61S6432-200PQ | 200MHz; 3.3V; 64K x 32 synchronous pipelined static RAM | ICSI | PQFP | 100 | 0°C | 70°C | 169K | | 206. | IDT71V35761S200PF | 128K x 36, 3.3V synchronous SRAM burst counter, single cycle deselect, 200MHz | IDT | TQFP | 100 | 0°C | 70°C | 282K | | 207. | IDT71V35761YS200PF | 128K x 36, 3.3V synchronous SRAM burst counter, single cycle deselect, 200MHz | IDT | TQFP | 100 | 0°C | 70°C | 282K | | 208. | IDT71V35761YS200PFI | 128K x 36, 3.3V synchronous SRAM burst counter, single cycle deselect, 200MHz | IDT | TQFP | 100 | -40°C | 85°C | 282K | | 209. | IDT71V35781S200PF | 256K x 18, 3.3V synchronous SRAM burst counter, single cycle deselect, 200MHz | IDT | TQFP | 100 | 0°C | 70°C | 282K | | 210. | IDT71V35781YS200PF | 256K x 18, 3.3V synchronous SRAM burst counter, single cycle deselect, 200MHz | IDT | TQFP | 100 | 0°C | 70°C | 282K | | 211. | IS61S6432-200PQ | 200MHz; 3.3V; 64K x 32 synchronous pipelined static RAM | ICSI | PQFP | 100 | 0°C | 70°C | 510K | | 212. | M48T02-200PC1 | CMOS 2K x 8 timekeeper SRAM, 200ns | STM | PCDIP | 24 | 0°C | 70°C | 503K | | 213. | M48T12-200PC1 | CMOS 2K x 8 timekeeper SRAM, 200ns | STM | PCDIP | 24 | 0°C | 70°C | 503K | | 214. | M48Z02-200PC1 | CMOS 2K x 8 zeropower SRAM, 200ns | STM | PCDIP | 24 | 0°C | 70°C | 503K | | 215. | M48Z02-200PC1 | CMOS 2K x 8 zeropower SRAM, 200ns | STM | PCDIP | 24 | 0°C | 70°C | 503K | | 216. | M48Z02-200PC6 | CMOS 2K x 8 zeropower SRAM, 200ns | STM | PCDIP | 24 | -40°C | 85°C | 503K | | 217. | M48Z12-200PC1 | CMOS 2K x 8 zeropower SRAM, 200ns | STM | PCDIP | 24 | 0°C | 70°C | 503K | | 218. | PSMN057-200P | 200 V, N-channel trenchMOS transistor | PHLPS | SOT | 3 | -55°C | 175°C | 92K | | 219. | PSMN070-200P | 200 V, N-channel trenchMOS transistor | PHLPS | SOT | 3 | -55°C | 175°C | 149K | | 220. | VQ200P | Quaq P-channel enhancement-mode MOSFET, 0.6A, 30V | VISAY | DIP | 14 | -55°C | 150°C | 250K |
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