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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 121. | G10S1A-DC12 | Relay. Nominal voltage 12VDC. Coil resistance(+-10%) 320W. Contact material & rating: AgCdO,6A. Contact arrangement: 1 form A. Endosure: sealed. | GCC | - | 5 | -30°C | 60°C | 51K |
| 122. | G10S1A-DC24 | Relay. Nominal voltage 24VDC. Coil resistance(+-10%) 1150W. Contact material & rating: AgCdO,6A. Contact arrangement: 1 form A. Endosure: sealed. | GCC | - | 5 | -30°C | 60°C | 51K |
| 123. | G10S1A-DC3 | Relay. Nominal voltage 3VDC. Coil resistance(+-10%) 20W. Contact material & rating: AgCdO,6A. Contact arrangement: 1 form A. Endosure: sealed. | GCC | - | 5 | -30°C | 60°C | 51K |
| 124. | G10S1A-DC5 | Relay. Nominal voltage 5VDC. Coil resistance(+-10%) 56W. Contact material & rating: AgCdO,6A. Contact arrangement: 1 form A. Endosure: sealed. | GCC | - | 5 | -30°C | 60°C | 51K |
| 125. | G10S1A-DC6 | Relay. Nominal voltage 6VDC. Coil resistance(+-10%) 80W. Contact material & rating: AgCdO,6A. Contact arrangement: 1 form A. Endosure: sealed. | GCC | - | 5 | -30°C | 60°C | 51K |
| 126. | G10S1A-DC9 | Relay. Nominal voltage 9VDC. Coil resistance(+-10%) 180W. Contact material & rating: AgCdO,6A. Contact arrangement: 1 form A. Endosure: sealed. | GCC | - | 5 | -30°C | 60°C | 51K |
| 127. | G10S1B-DC12 | Relay. Nominal voltage 12VDC. Coil resistance(+-10%) 320W. Contact material & rating: AgCdO, 6A. Contact arrangement: 1 form B. Endosure: sealed. | GCC | - | 5 | -30°C | 60°C | 51K |
| 128. | G10S1B-DC24 | Relay. Nominal voltage 24VDC. Coil resistance(+-10%) 1150W. Contact material & rating: AgCdO, 6A. Contact arrangement: 1 form B. Endosure: sealed. | GCC | - | 5 | -30°C | 60°C | 51K |
| 129. | G10S1B-DC3 | Relay. Nominal voltage 3VDC. Coil resistance(+-10%) 20W. Contact material & rating: AgCdO, 6A. Contact arrangement: 1 form B. Endosure: sealed. | GCC | - | 5 | -30°C | 60°C | 51K |
| 130. | G10S1B-DC5 | Relay. Nominal voltage 5VDC. Coil resistance(+-10%) 56W. Contact material & rating: AgCdO, 6A. Contact arrangement: 1 form B. Endosure: sealed. | GCC | - | 5 | -30°C | 60°C | 51K |
| 131. | G10S1B-DC6 | Relay. Nominal voltage 6VDC. Coil resistance(+-10%) 80W. Contact material & rating: AgCdO, 6A. Contact arrangement: 1 form B. Endosure: sealed. | GCC | - | 5 | -30°C | 60°C | 51K |
| 132. | G10S1B-DC9 | Relay. Nominal voltage 9VDC. Coil resistance(+-10%) 180W. Contact material & rating: AgCdO, 6A. Contact arrangement: 1 form B. Endosure: sealed. | GCC | - | 5 | -30°C | 60°C | 51K |
| 133. | G10S1B-DC9 | Relay. Nominal voltage 9VDC. Coil resistance(+-10%) 180W. Contact material & rating: AgCdO, 6A. Contact arrangement: 1 form B. Endosure: sealed. | GCC | - | 5 | -30°C | 60°C | 51K |
| 134. | G10S1C-DC3 | Relay. Nominal voltage 3VDC. Coil resistance(+-10%) 20W. Contact material & rating: AgCdO, 6A. Contact arrangement: 1 form C. Endosure: sealed. | GCC | - | 5 | -30°C | 60°C | 51K |
| 135. | IXFN100N10S1 | 100V HiPerFET power MOSFET with schottky diodes | IXYS | SOT-227B | 4 | -40°C | 150°C | 99K |
| 136. | MAS110S10 | 1000V fast turn-off asymmetric thyristor/diode module | DYNEX | - | 4 | -40°C | 125°C | 67K |
| 137. | PDM4M4110S15M | 512K x 32 CMOS static RAM module | PARAD | SIMM | 72 | 0°C | 70°C | 271K |
| 138. | PDM4M4110S15Z | 512K x 32 CMOS static RAM module | PARAD | ZIP | 72 | 0°C | 70°C | 271K |
| 139. | VT73LVP10S1 | TTL to differential LVPECL translator with enable | VAISH | SOIC | 8 | -40°C | 85°C | 69K |
| 140. | VT73LVP10S1X | TTL to differential LVPECL translator with enable | VAISH | SOIC | 8 | -40°C | 85°C | 69K |
