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FP10 datasheet
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Found: 20 Displaying: 1 - 20| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size | | 1. | FFP10U20DN | FAST RECOVERY POWER RECTIFIER | FAIR | - | - | - | - | 108K | | 2. | FFP10U20DN | FAST RECOVERY POWER RECTIFIER | FAIR | - | - | - | - | 108K | | 3. | FFP10U60DN | ULTRA FAST RECOVERY POWER RECTIFIER | FAIR | - | - | - | - | 54K | | 4. | FP100 | High performance PHEMT | FILTR | - | - | - | - | 32K | | 5. | FP100F | 10000 V rectifier stack 2.2 A forward current, 150 ns recovery time | VMI | - | 2 | -55°C | 150°C | 70K | | 6. | FP100S | 10000 V rectifier stack 2.2 A forward current, 3000 ns recovery time | VMI | - | 2 | -55°C | 150°C | 70K | | 7. | FP101 | PNP epitaxial planar silicon transistor + composite schottky barrier diode, DC-DC convertor application | SANYO | 2088A | 7 | - | - | 118K | | 8. | FP101 | High dynamic range FET | WJ | - | 4 | -40°C | 80°C | 82K | | 9. | FP102 | PNP epitaxial planar silicon transistor + composite schottky barrier diode, DC-DC convertor application | SANYO | 2088A | 7 | - | - | 116K | | 10. | FP103 | PNP epitaxial planar silicon transistor + composite schottky barrier diode, DC-DC convertor application | SANYO | 2088A | 7 | - | - | 119K | | 11. | FP104 | PNP epitaxial planar silicon transistor + schottky barrier diode, DC-DC convertor application | SANYO | 2088A | 7 | - | - | 131K | | 12. | FP105 | PNP epitaxial planar silicon transistor + schottky barrier diode, DC-DC convertor application | SANYO | 2088A | 7 | - | - | 123K | | 13. | FP106 | PNP epitaxial planar silicon transistor + schottky barrier diode, DC-DC convertor application | SANYO | 2088A | 7 | - | - | 121K | | 14. | FP107 | PNP epitaxial planar silicon transistor + schottky barrier diode, DC-DC convertor application | SANYO | 2088A | 7 | - | - | 112K | | 15. | FP108 | PNP epitaxial planar silicon transistor + schottky barrier diode, DC-DC convertor application | SANYO | 2088A | 7 | - | - | 115K | | 16. | RFP10N15 | 10.0A, 120V and 150V, 0.300 ohm, N-Channel Power MOSFET FN1445.2 | INTRS | - | - | - | - | 40K | | 17. | RFP10N15 | 10A, 150V, 0.3 Ohm, N-channel power MOSFET | INTRS | - | 3 | -55°C | 150°C | 40K | | 18. | RFP10P03L | Power dissipation 60 W Transistor polarity P Channel Current Id cont. 10 A Current Idm pulse 25 A Voltage Vgs th max. 2 V Pitch lead 2.54 mm Voltage Vds max 30 V Resistance Rds on 0.2 R | FAIR | TO-220 | - | - | - | 272K | | 19. | RFP10P03L | 10A, 30V, 0.200 Ohm, Logic Level, P-Channel Power MOSFET | INTRS | - | - | - | - | 133K | | 20. | RFP10P15 | -10A, -150V, 0.500 Ohm, P-Channel Power MOSFET | INTRS | - | - | - | - | 305K |
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