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NTE65101 Datasheet | | Description: | Integrated circuit. 256 x 4 bit static RAM (SRAM). | Manufacturer: | NTE | Temp. range: | Min: -40°C | Max: 85°C | Package: | DIP | Pins: | 22 | Datasheet: | NTE65101.PDF (30Kb) |
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# | Component part name | Component Description | Manufacturer | PDF size | 1. | NTE60 | Silicon complrmentary NPN transistor to NTE61. High power audio, disk head positioner for linear applications. | NTE | 24K | 2. | NTE6002 | Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 1000V. Average forward current 40A. | NTE | 26K | 3. | NTE6002 | Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 1000V. Average forward current 40A. | NTE | 26K | 4. | NTE6003 | Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 1000V. Average forward current 40A. | NTE | 26K | 5. | NTE6004 | Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 1600V. Average forward current 40A. | NTE | 26K | 6. | NTE6005 | Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 1600V. Average forward current 40A. | NTE | 26K |
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| NTE65101.PDF
NTE65101 DatasheetSilicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 1600V. Average forward current 40A.
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