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Searchign results: F1004

F1004 datasheet



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Found: 31      Displaying: 1 - 20
#
Part:
Description:
Manuf.
Package
Pins
T°min
T°max
PDF size
1.
F1004Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
POFET
-
6
-65°C
150°C
37K
2.
MRF1004MB4 W, microwave power transistor NPN silicon
MACOM
-
4
-
-
101K
3.
PTF1004312 watts, 1.9-2.0 GHz GOLDMOS field effect transistor
ERSON
20222
4
-
-
235K
4.
PTF1004530 watts, 1.60-1.65 GHz GOLDMOS field effect transistor
ERSON
20222
4
-
-
207K
5.
PTF1004830 watts, 2.1-2.2 GHz,W-CDMA GOLDMOS field effect transistor
ERSON
20237
3
-
-
233K
6.
REF1004C-1.2Micropower Voltage Reference
BB
8
-
0°C
70°C
71K
7.
REF1004C-1.2/2K5Micropower Voltage Reference
BB
8
-
0°C
70°C
71K
8.
REF1004C-2.5Micropower Voltage Reference
BB
8
-
0°C
70°C
71K
9.
REF1004C-2.5/2K5Micropower Voltage Reference
BB
8
-
0°C
70°C
71K
10.
REF1004I-1.2Micropower Voltage Reference
BB
8
-
0°C
70°C
71K
11.
REF1004I-1.2/2K5Micropower Voltage Reference
BB
8
-
0°C
70°C
71K
12.
REF1004I-2.5Micropower Voltage Reference
BB
8
-
0°C
70°C
71K
13.
REF1004I-2.5/2K5Micropower Voltage Reference
BB
8
-
0°C
70°C
71K
14.
UF10041AMP ultra fast switching rectifier
CALLM
-
2
-65°C
150°C
759K
15.
UF1004CTReverse voltage: 400.00V; 10A ultrafast glass passivated rectifier
WTE
TO-220
3
-65°C
150°C
48K
16.
UF1004CTReverse voltage: 400.00V; 10A ultrafast glass passivated rectifier
WTE
TO-220
3
-65°C
150°C
48K
17.
UF1004FReverse voltage: 400.00V; 10A isolated ultrafast glass passivated rectifier
WTE
TO-220A
2
-65°C
150°C
44K
18.
UF1004FReverse voltage: 400.00V; 10A isolated ultrafast glass passivated rectifier
WTE
TO-220A
2
-65°C
150°C
44K
19.
UF1004FCTReverse voltage: 400.00V; 10A isolated ultrafast glass passivated rectifier
WTE
TO-220
3
-65°C
150°C
46K
20.
UF1004FCTReverse voltage: 400.00V; 10A isolated ultrafast glass passivated rectifier
WTE
TO-220
3
-65°C
150°C
46K
21.
UF1004FCTReverse voltage: 400.00V; 10A isolated ultrafast glass passivated rectifier
WTE
TO-220
3
-65°C
150°C
46K
1 2


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