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Searchign results: W216

W216 datasheet



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Found: 10      Displaying: 1 - 10
#
Part:
Description:
Manuf.
Package
Pins
T°min
T°max
PDF size
1.
20KW216216.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
MDE
P-600
2
-55°C
175°C
166K
2.
20KW216A216.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
MDE
P-600
2
-55°C
175°C
166K
3.
30KW216216.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
MDE
P-600
2
-55°C
175°C
166K
4.
30KW216A216.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
MDE
P-600
2
-55°C
175°C
166K
5.
AQW216APhotoMOS relay, GU (general use), 2-channel (form A) type. AC/DC type. Output rating: load voltage 600 V, load current 40 mA. Surface-mount terminal. Tube packing style.
NAIS
DIP
8
-40°C
85°C
46K
6.
AQW216AXPhotoMOS relay, GU (general use), 2-channel (form A) type. AC/DC type. Output rating: load voltage 600 V, load current 40 mA. Surface-mount terminal. Tape and reel packing style.
NAIS
DIP
8
-40°C
85°C
46K
7.
AQW216AZPhotoMOS relay, GU (general use), 2-channel (form A) type. AC/DC type. Output rating: load voltage 60 V, load current 40 mA. Surface-mount terminal. Tape and reel packing style.
NAIS
DIP
8
-40°C
85°C
46K
8.
M36W216B16 MBIT (1MB X16, BOOT BLOCK) FLASH MEMORY AND 2 MBIT (128K X16) SRAM, MULTIPLE MEMORY PRODUCT
STM
-
-
-
-
434K
9.
M36W216T16 MBIT (1MB X16, BOOT BLOCK) FLASH MEMORY AND 2 MBIT (128K X16) SRAM, MULTIPLE MEMORY PRODUCT
STM
-
-
-
-
434K
10.
W216HSpread Spectrum FTG for 440BX and VIA Apollo Pro-133
CYPR
-
-
-
-
154K
1


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