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STH4N90 Datasheet | | Description: | Power dissipation 125 W Transistor polarity N Channel Current Id cont. 4.2 A Current Idm pulse 16 A Pitch lead 5.45 mm Voltage Vds max 900 V Resistance Rds on 3.2 R Temperature current 25 ?C | Manufacturer: | SGS-Thomson Microelectronics | Temp. range: | Min: - | Max: - | Package: | TO-218 | Pins: | - | Datasheet: | STH4N90.PDF (621Kb) |
Related datasheets for STH4N90:Lower in the list you can see the relative results of searching, which resembling the inquiring. If there is no necessary name in the results of searching for STH4N90 – look at the relative results.
# | Component part name | Component Description | Manufacturer | PDF size | 1. | STH10NA50FI | N-CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTORS | STM | 243K | 2. | STH10NC60FI | N-CHANNEL 600V - 0.6 OHM - 10A - TO-247/ISOWATT218 POWERMESH MOSFET | STM | 337K | 3. | STH12NA60FI | N-CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTORS | STM | 243K | 4. | STH15NA50FI | N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR | STM | 243K | 5. | STH15NB50FI | Transistor polarity N Channel Current Id cont. 10.6 A Voltage isolation 4 kV Pitch lead 5.45 mm Power Ptot 80 W Voltage Vds max 500 V Resistance Rds on 0.36 R Current Id cont @ 100 degree C 6.6 A | STM | 110K | 6. | STH16NA40FI | N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR | STM | 73K |
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| STH4N90.PDF
STH4N90 DatasheetN-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
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